• Manufacturer: Cree/Wolfspeed
• Series: GaN
• Package / Case: 440196
• Supplier Device Package: 440196
• Frequency: 6GHz
• Voltage - Rated: 150V
• Current - Test: 150mA
• Power - Output: 30W
• Transistor Type: HEMT
• Gain: 16dB
• Voltage - Test: 50V

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-37248-4
• Supplier Device Package: H-37248-4
• Frequency: 960MHz
• Voltage - Rated: 65V
• Current - Test: 1.4A
• Power - Output: 55W
• Transistor Type: LDMOS
• Gain: 19.5dB
• Voltage - Test: 28V

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-34288-4/2
• Supplier Device Package: H-34288-4/2
• Frequency: 1.99GHz
• Voltage - Rated: 65V
• Current - Test: 1.9A
• Power - Output: 50W
• Transistor Type: LDMOS
• Gain: 19dB
• Voltage - Test: 30V

• Manufacturer: Cree/Wolfspeed
• Series: C2M™
• Mounting Type: Through Hole
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id: 4V @ 18mA
• Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 520W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs (Max): +25V, -10V

• Manufacturer: Cree/Wolfspeed

• Manufacturer: Cree/Wolfspeed

• Manufacturer: Cree/Wolfspeed
• Series: C2M™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-7 (Straight Leads)
• Supplier Device Package: D2PAK (7-Lead)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
• Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
• Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 78W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs (Max): +25V, -10V

• Manufacturer: Cree/Wolfspeed
• Series: Z-FET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 135°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 215W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs (Max): +25V, -5V

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id: 2.1V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 125W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +18V, -8V

• Manufacturer: Cree/Wolfspeed
• Series: GaN
• Package / Case: 440193
• Supplier Device Package: 440193
• Frequency: 0Hz ~ 4GHz
• Voltage - Rated: 84V
• Current - Test: 500mA
• Power - Output: 45W
• Transistor Type: HEMT
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating (Amps): 10.5A

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-37275-6/2
• Supplier Device Package: H-37275-6/2
• Frequency: 2.17GHz
• Voltage - Rated: 65V
• Current - Test: 2.4A
• Power - Output: 60W
• Transistor Type: LDMOS
• Gain: 18dB
• Voltage - Test: 30V

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-37275G-6/2
• Supplier Device Package: H-37275G-6/2
• Frequency: 2.11GHz ~ 2.17GHz
• Voltage - Rated: 65V
• Current - Test: 2.6A
• Power - Output: 320W
• Transistor Type: LDMOS
• Gain: 17dB
• Voltage - Test: 28V
• Current Rating (Amps): 10µA

• Manufacturer: Cree/Wolfspeed
• Series: Z-FET™ Z-Rec™
• Mounting Type: Chassis Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: Module
• Supplier Device Package: Module
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
• Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V
• Power - Max: 337W

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: D2PAK-7
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id: 2.1V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 113W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +19V, -8V

• Manufacturer: Cree/Wolfspeed