• Производитель
  • Тип корпуса
  • Выходная мощность
  • Номинальное напряжение
    • Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 28
Наименование Описание Производитель
Тип корпуса
Вид монтажа
Package / Case
Технология
Рабочая температура
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Входная емкость (Ciss) (Max) @ Vds
GA16JT17-247 TRANS SJT 1700V 16A TO-247AB GeneSiC Semiconductor TO-247AB Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) 175°C (TJ) 282W (Tc) 1700V 16A (Tc) (90°C) 110mOhm @ 16A
GA08JT17-247 TRANS SJT 1700V 8A TO-247AB GeneSiC Semiconductor TO-247AB Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) 175°C (TJ) 48W (Tc) 1700V 8A (Tc) (90°C) 250mOhm @ 8A
GA10SICP12-263 TRANS SJT 1200V 25A TO263-7 GeneSiC Semiconductor D2PAK (7-Lead) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiC (Silicon Carbide Junction Transistor) 175°C (TJ) 170W (Tc) 1200V 25A (Tc) 100mOhm @ 10A 1403pF @ 800V
2N7639-GA TRANS SJT 650V 15A TO-257 GeneSiC Semiconductor TO-257 Through Hole TO-257-3 SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) 172W (Tc) 650V 15A (Tc) (155°C) 105mOhm @ 15A 1534pF @ 35V
GA10JT12-263 TRANS SJT 1200V 25A GeneSiC Semiconductor Surface Mount SiC (Silicon Carbide Junction Transistor) 175°C (TJ) 170W (Tc) 1200V 25A (Tc) 120mOhm @ 10A 1403pF @ 800V
GA100JT12-227 TRANS SJT 1200V 160A SOT227 GeneSiC Semiconductor SOT-227 Chassis Mount SOT-227-4, miniBLOC SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) 535W (Tc) 1200V 160A (Tc) 10mOhm @ 100A 14400pF @ 800V
GA20SICP12-247 TRANS SJT 1200V 45A TO247 GeneSiC Semiconductor TO-247AB Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) 282W (Tc) 1200V 45A (Tc) 50mOhm @ 20A 3091pF @ 800V
2N7638-GA TRANS SJT 650V 8A TO276 GeneSiC Semiconductor TO-276 Surface Mount TO-276AA SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) 200W (Tc) 650V 8A (Tc) (158°C) 170mOhm @ 8A 720pF @ 35V
GA05JT12-247 TRANS SJT 1200V 5A GeneSiC Semiconductor TO-247AB Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) 175°C (TJ) 106W (Tc) 1200V 5A (Tc) 280mOhm @ 5A
GA50JT06-258 TRANS SJT 600V 100A GeneSiC Semiconductor TO-258 Through Hole TO-258-3, TO-258AA SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) 769W (Tc) 600V 100A (Tc) 25mOhm @ 50A
GA03JT12-247 TRANS SJT 1200V 3A TO-247AB GeneSiC Semiconductor TO-247AB Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) 175°C (TJ) 15W (Tc) 1200V 3A (Tc) (95°C) 460mOhm @ 3A
GA06JT12-247 TRANS SJT 1200V 6A TO-247AB GeneSiC Semiconductor TO-247AB Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) 175°C (TJ) 1200V 6A (Tc) (90°C) 220mOhm @ 6A
GA50JT12-263 TRANSISTOR 1200V 100A TO263-7 GeneSiC Semiconductor
GA05JT01-46 TRANS SJT 100V 9A GeneSiC Semiconductor TO-46 Through Hole TO-46-3 SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) 20W (Tc) 100V 9A (Tc) 240mOhm @ 5A
GA100JT17-227 TRANS SJT 1700V 160A SOT227 GeneSiC Semiconductor SOT-227 Chassis Mount SOT-227-4, miniBLOC SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) 535W (Tc) 1700V 160A (Tc) 10mOhm @ 100A 14400pF @ 800V
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