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Списком Таблицей
Найдено: 24
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
PBRN113ES,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 1kOhms 1.15V @ 8mA, 800mA 500nA 180 @ 300mA, 5V 1kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP123YS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP113ZS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 1kOhms 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP123ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 2.2kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2SD1697-AZ SMALL SIGNAL BIPOLAR TRANSISTOR, Renesas Electronics America Inc 800mA 80V 1W Through Hole NPN - Pre-Biased 1kOhms 1.2V @ 1mA, 500mA 1µA (ICBO) 4000 @ 300mA, 2V 3-SSIP
RN1424TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 10kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 300MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN2427TE85LF TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1425TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 470Ohms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 300MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1423TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 4.7kOhms 250mV @ 1mA, 50mA 500nA 70 @ 100mA, 1V 300MHz 4.7kOhms TO-236-3, SC-59, SOT-23-3
RN1422TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 65 @ 100mA, 1V 300MHz 2.2kOhms TO-236-3, SC-59, SOT-23-3
RN2422TE85LF TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 65 @ 100mA, 1V 200MHz 2.2kOhms TO-236-3, SC-59, SOT-23-3
RN1427TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 300MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN2426(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 1kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN2424(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 10kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN2425(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
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