- Current - Collector (Ic) (Max)
- Manufacturer
- Voltage - Collector Emitter Breakdown (Max)
- Transistor Type
- Supplier Device Package
-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
Partnumber | Description | Manufacturer
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Supplier Device Package
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Resistor - Emitter Base (R2)
|
Package / Case
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PBRN113ES,126 | TRANS PREBIAS NPN 0.7W TO92-3 | NXP USA Inc. | 800mA | 40V | 700mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 1kOhms | 1.15V @ 8mA, 800mA | 500nA | 180 @ 300mA, 5V | 1kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
PBRP123YS,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 800mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 2.2kOhms | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | ||||
PBRP113ZS,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 800mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 1kOhms | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | ||||
PBRP123ES,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 800mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 2.2kOhms | 2.2kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | ||||
2SD1697-AZ | SMALL SIGNAL BIPOLAR TRANSISTOR, | Renesas Electronics America Inc | 800mA | 80V | 1W | Through Hole | NPN - Pre-Biased | 1kOhms | 1.2V @ 1mA, 500mA | 1µA (ICBO) | 4000 @ 300mA, 2V | 3-SSIP | |||
RN1424TE85LF | TRANS PREBIAS NPN 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 10kOhms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 300MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
RN2427TE85LF | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 2.2kOhms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 200MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
RN1425TE85LF | TRANS PREBIAS NPN 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 470Ohms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 300MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
RN1423TE85LF | TRANS PREBIAS NPN 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 4.7kOhms | 250mV @ 1mA, 50mA | 500nA | 70 @ 100mA, 1V | 300MHz | 4.7kOhms | TO-236-3, SC-59, SOT-23-3 |
RN1422TE85LF | TRANS PREBIAS NPN 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 2.2kOhms | 250mV @ 1mA, 50mA | 500nA | 65 @ 100mA, 1V | 300MHz | 2.2kOhms | TO-236-3, SC-59, SOT-23-3 |
RN2422TE85LF | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 2.2kOhms | 250mV @ 1mA, 50mA | 500nA | 65 @ 100mA, 1V | 200MHz | 2.2kOhms | TO-236-3, SC-59, SOT-23-3 |
RN1427TE85LF | TRANS PREBIAS NPN 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 2.2kOhms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 300MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
RN2426(TE85L,F) | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 1kOhms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 200MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
RN2424(TE85L,F) | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 10kOhms | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 200MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
RN2425(TE85L,F) | TRANS PREBIAS PNP 50V 0.8A SMINI | Toshiba Semiconductor and Storage | 800mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | S-Mini | 250mV @ 1mA, 50mA | 500nA | 90 @ 100mA, 1V | 200MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
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