• Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 15
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
1N6077/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C
1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C
1N6078/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C
1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C
JANTXV1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTX1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole A-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JAN1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTXV1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
1N6076/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C
JANTX1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole A-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C
JAN1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTX1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole A-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTXV1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JAN1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
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  • 50
  • 100