Found: 15
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Series
1N6077/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C
1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C
1N6078/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C
1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C
JANTXV1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTX1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole A-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JAN1N6076 DIODE GEN PURP 50V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTXV1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
1N6076/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 50V 1.76V @ 18.8A 50V 30ns -65°C ~ 155°C
JANTX1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole A-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C
JAN1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTX1N6078 DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology A, Axial 1.3A Standard Through Hole A-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 150V 1.76V @ 18.8A 150V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JANTXV1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503
JAN1N6077 DIODE GEN PURP 100V 1.3A AXIAL Microchip Technology E, Axial 1.3A Standard Through Hole E-PAK Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 1.76V @ 18.8A 100V 30ns -65°C ~ 155°C Military, MIL-PRF-19500/503