Найдено: 16
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
IDH15S120AKSA1 DIODE SCHOTTKY 1200V 15A TO220-2 Infineon Technologies TO-220-2 15A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-2 No Recovery Time > 500mA (Io) 360µA @ 1200V 750pF @ 1V, 1MHz 1.8V @ 15A 1200V 0ns -55°C ~ 175°C CoolSiC™+
IDH15S120A RECTIFIER DIODE, SCHOTTKY Infineon Technologies TO-220-2 15A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-2 No Recovery Time > 500mA (Io) 360µA @ 1.2V 750pF @ 1V, 1MHz 1.8V @ 15A 1200V 0ns -55°C ~ 175°C CoolSiC™+
SIDC06D60F6X1SA4 DIODE SWITCHING 600V WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Die Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.6V @ 15A 600V -40°C ~ 175°C
SIDC06D60F6X1SA2 DIODE SWITCHING 600V WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Die Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.6V @ 15A 600V -40°C ~ 175°C
SIDC06D60F6X7SA1 DIODE SWITCHING 600V WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Die Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.6V @ 15A 600V -40°C ~ 175°C
SIDC06D60F6X1SA3 DIODE GEN PURP 600V 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Sawn on foil Fast Recovery =< 500ns, > 200mA (Io) 27µA @ 600V 1.6V @ 15A 600V -40°C ~ 150°C
SIDC14D120E6X1SA4 DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 27µA @ 1200V 1.9V @ 15A 1200V -55°C ~ 150°C
SIDC07D60E6X1SA3 DIODE SWITCHING 600V WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Die Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.25V @ 15A 600V -55°C ~ 150°C
SIDC10D120H6X1SA5 DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 27µA @ 1200V 1.6V @ 15A 1200V -55°C ~ 150°C
SIDC10D120H8X1SA2 DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 27µA @ 1200V 1.97V @ 7.5A 1200V -40°C ~ 175°C
IDW15S120FKSA1 DIODE SCHOTTKY 1200V 15A TO247-3 Infineon Technologies TO-247-3 15A (DC) Silicon Carbide Schottky Through Hole PG-TO247-3 No Recovery Time > 500mA (Io) 305µA @ 1200V 870pF @ 1V, 1MHz 1.8V @ 15A 1200V 0ns -55°C ~ 175°C CoolSiC™+
SIDC07D60E6X1SA1 DIODE GEN PURP 600V 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 250µA @ 600V 1.25V @ 15A 600V -55°C ~ 150°C
SIDC05D60C6X1SA2 DIODE GEN PURP 600V 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.95V @ 15A 600V -40°C ~ 175°C
SIDC05D60C8X1SA1 DIODE GEN PURP 600V 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Die Standard Recovery >500ns, > 200mA (Io) 27µA @ 600V 1.95V @ 15A 600V -40°C ~ 175°C
SIDC14D120F6X1SA3 DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies Die 15A (DC) Standard Surface Mount Sawn on foil Standard Recovery >500ns, > 200mA (Io) 27µA @ 1200V 2.1V @ 15A 1200V -55°C ~ 150°C