-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH15S120AKSA1 | DIODE SCHOTTKY 1200V 15A TO220-2 | Infineon Technologies | TO-220-2 | 15A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 360µA @ 1200V | 750pF @ 1V, 1MHz | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
IDH15S120A | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | TO-220-2 | 15A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 360µA @ 1.2V | 750pF @ 1V, 1MHz | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
SIDC06D60F6X1SA4 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 15A | 600V | -40°C ~ 175°C | |||
SIDC06D60F6X1SA2 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 15A | 600V | -40°C ~ 175°C | |||
SIDC06D60F6X7SA1 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 15A | 600V | -40°C ~ 175°C | |||
SIDC06D60F6X1SA3 | DIODE GEN PURP 600V 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Sawn on foil | Fast Recovery =< 500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 15A | 600V | -40°C ~ 150°C | |||
SIDC14D120E6X1SA4 | DIODE GEN PURP 1.2KV 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 1.9V @ 15A | 1200V | -55°C ~ 150°C | |||
SIDC07D60E6X1SA3 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.25V @ 15A | 600V | -55°C ~ 150°C | |||
SIDC10D120H6X1SA5 | DIODE GEN PURP 1.2KV 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 1.6V @ 15A | 1200V | -55°C ~ 150°C | |||
SIDC10D120H8X1SA2 | DIODE GEN PURP 1.2KV 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 1.97V @ 7.5A | 1200V | -40°C ~ 175°C | |||
IDW15S120FKSA1 | DIODE SCHOTTKY 1200V 15A TO247-3 | Infineon Technologies | TO-247-3 | 15A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO247-3 | No Recovery Time > 500mA (Io) | 305µA @ 1200V | 870pF @ 1V, 1MHz | 1.8V @ 15A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
SIDC07D60E6X1SA1 | DIODE GEN PURP 600V 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 250µA @ 600V | 1.25V @ 15A | 600V | -55°C ~ 150°C | |||
SIDC05D60C6X1SA2 | DIODE GEN PURP 600V 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.95V @ 15A | 600V | -40°C ~ 175°C | |||
SIDC05D60C8X1SA1 | DIODE GEN PURP 600V 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.95V @ 15A | 600V | -40°C ~ 175°C | |||
SIDC14D120F6X1SA3 | DIODE GEN PURP 1.2KV 15A WAFER | Infineon Technologies | Die | 15A (DC) | Standard | Surface Mount | Sawn on foil | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 1200V | 2.1V @ 15A | 1200V | -55°C ~ 150°C |
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