• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 16
  • IDH15S120AKSA1
    DIODE SCHOTTKY 1200V 15A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 360µA @ 1200V
    • Capacitance @ Vr, F: 750pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • IDH15S120A
    RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 360µA @ 1.2V
    • Capacitance @ Vr, F: 750pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • SIDC06D60F6X1SA4
    DIODE SWITCHING 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • SIDC06D60F6X1SA2
    DIODE SWITCHING 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • SIDC06D60F6X7SA1
    DIODE SWITCHING 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • SIDC06D60F6X1SA3
    DIODE GEN PURP 600V 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • SIDC14D120E6X1SA4
    DIODE GEN PURP 1.2KV 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • SIDC07D60E6X1SA3
    DIODE SWITCHING 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • SIDC10D120H6X1SA5
    DIODE GEN PURP 1.2KV 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • SIDC10D120H8X1SA2
    DIODE GEN PURP 1.2KV 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.97V @ 7.5A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • IDW15S120FKSA1
    DIODE SCHOTTKY 1200V 15A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 305µA @ 1200V
    • Capacitance @ Vr, F: 870pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • SIDC07D60E6X1SA1
    DIODE GEN PURP 600V 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 250µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • SIDC05D60C6X1SA2
    DIODE GEN PURP 600V 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.95V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • SIDC05D60C8X1SA1
    DIODE GEN PURP 600V 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.95V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 175°C
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  • SIDC14D120F6X1SA3
    DIODE GEN PURP 1.2KV 15A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 15A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • 10
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