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G3S06530P
|
SIC SCHOTTKY DIODE 650V 30A 2-PI |
Global Power Technology-GPT |
TO-247-2 |
95A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
2150pF @ 0V, 1MHz |
1.7V @ 30A |
650V |
0ns |
-55°C ~ 175°C |
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G3S12015A
|
SIC SCHOTTKY DIODE 1200V 15A 2-P |
Global Power Technology-GPT |
TO-220-2 |
57A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
1700pF @ 0V, 1MHz |
1.7V @ 15A |
1200V |
0ns |
-55°C ~ 175°C |
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G51XT
|
SIC SCHOTTKY DIODE 650V 1A SOD12 |
Global Power Technology-GPT |
SOD-123F |
1.84A (DC) |
Silicon Carbide Schottky |
Surface Mount |
SOD-123FL |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
57.5pF @ 0V, 1MHz |
1.6V @ 1A |
650V |
0ns |
-55°C ~ 175°C |
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G3S06505H
|
SIC SCHOTTKY DIODE 650V 5A 2-PIN |
Global Power Technology-GPT |
TO-220-2 Full Pack |
15.4A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
424pF @ 0V, 1MHz |
1.7V @ 5A |
650V |
0ns |
-55°C ~ 175°C |
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G4S06510HT
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology-GPT |
TO-220-2 Full Pack |
20A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
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|
|
G5S06510QT
|
SIC SCHOTTKY DIODE 650V 10A DFN8 |
Global Power Technology-GPT |
4-PowerTSFN |
53A (DC) |
Silicon Carbide Schottky |
Surface Mount |
4-DFN (8x8) |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
645pF @ 0V, 1MHz |
1.5V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
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|
G5S12010C
|
SIC SCHOTTKY DIODE 1200V 10A 2-P |
Global Power Technology-GPT |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
34.2A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
825pF @ 0V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
|
G4S06515AT
|
SIC SCHOTTKY DIODE 650V 15A 2-PI |
Global Power Technology-GPT |
TO-220-2 |
36A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
645pF @ 0V, 1MHz |
1.7V @ 15A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S12010A
|
SIC SCHOTTKY DIODE 1200V 10A 2-P |
Global Power Technology-GPT |
TO-220-2 |
34.8A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
770pF @ 0V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
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|
G3S06520H
|
SIC SCHOTTKY DIODE 650V 20A 2-PI |
Global Power Technology-GPT |
TO-220-2 Full Pack |
26A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
1170pF @ 0V, 1MHz |
1.7V @ 20A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S12003H
|
SIC SCHOTTKY DIODE 1200V 3A 2-PI |
Global Power Technology-GPT |
TO-220-2 Full Pack |
9A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
100µA @ 1200V |
260pF @ 0V, 1MHz |
1.7V @ 3A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S06510P
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology-GPT |
TO-247-2 |
32.8A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
690pF @ 0V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G4S06540PT
|
SIC SCHOTTKY DIODE 650V 40A 2-PI |
Global Power Technology-GPT |
TO-247-2 |
81.8A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
1860pF @ 0V, 1MHz |
1.7V @ 40A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G5S12020B
|
SIC SCHOTTKY DIODE 1200V 20A 3-P |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
|
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
33A (DC) |
|
G5S12002C
|
SIC SCHOTTKY DIODE 1200V 2A 2-PI |
Global Power Technology-GPT |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
8.8A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
170pF @ 0V, 1MHz |
1.7V @ 2A |
1200V |
0ns |
-55°C ~ 175°C |
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