• Manufacturer
  • Current - Average Rectified (Io)
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 184
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G3S06530P SIC SCHOTTKY DIODE 650V 30A 2-PI Global Power Technology-GPT TO-247-2 95A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 2150pF @ 0V, 1MHz 1.7V @ 30A 650V 0ns -55°C ~ 175°C
G3S12015A SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology-GPT TO-220-2 57A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1700pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G51XT SIC SCHOTTKY DIODE 650V 1A SOD12 Global Power Technology-GPT SOD-123F 1.84A (DC) Silicon Carbide Schottky Surface Mount SOD-123FL No Recovery Time > 500mA (Io) 50µA @ 650V 57.5pF @ 0V, 1MHz 1.6V @ 1A 650V 0ns -55°C ~ 175°C
G3S06505H SIC SCHOTTKY DIODE 650V 5A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 15.4A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 5A 650V 0ns -55°C ~ 175°C
G4S06510HT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 20A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G5S06510QT SIC SCHOTTKY DIODE 650V 10A DFN8 Global Power Technology-GPT 4-PowerTSFN 53A (DC) Silicon Carbide Schottky Surface Mount 4-DFN (8x8) No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.5V @ 10A 650V 0ns -55°C ~ 175°C
G5S12010C SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 34.2A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 1200V 825pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G4S06515AT SIC SCHOTTKY DIODE 650V 15A 2-PI Global Power Technology-GPT TO-220-2 36A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.7V @ 15A 650V 0ns -55°C ~ 175°C
G3S12010A SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-220-2 34.8A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 770pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G3S06520H SIC SCHOTTKY DIODE 650V 20A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 26A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 1170pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S12003H SIC SCHOTTKY DIODE 1200V 3A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 9A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 100µA @ 1200V 260pF @ 0V, 1MHz 1.7V @ 3A 1200V 0ns -55°C ~ 175°C
G3S06510P SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-247-2 32.8A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G4S06540PT SIC SCHOTTKY DIODE 650V 40A 2-PI Global Power Technology-GPT TO-247-2 81.8A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 1860pF @ 0V, 1MHz 1.7V @ 40A 650V 0ns -55°C ~ 175°C
G5S12020B SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 10A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 33A (DC)
G5S12002C SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 8.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
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