|
G3S06504D
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology Co. Ltd |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503A
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 |
11.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06504C
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology Co. Ltd |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503D
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology Co. Ltd |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06504A
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 |
11.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503C
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology Co. Ltd |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06504A
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
11.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503A
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
11.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06504C
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology-GPT |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503C
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology-GPT |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06504D
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06503D
|
SIC SCHOTTKY DIODE 650V 3A 2-PIN |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 3A |
650V |
0ns |
-55°C ~ 175°C |
|
|
FFSH1065B-F085
|
650V 10A SIC SBD GEN1.5 |
onsemi |
TO-247-2 |
11.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247-2 |
No Recovery Time > 500mA (Io) |
40µA @ 650V |
421pF @ 1V, 100kHz |
|
650V |
0ns |
-55°C ~ 175°C |
Automotive, AEC-Q101 |