• Current - Average Rectified (Io)
  • Manufacturer
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 13
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Series
G3S06504D SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology Co. Ltd TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G3S06503A SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology Co. Ltd TO-220-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G3S06504C SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology Co. Ltd TO-252-3, DPak (2 Leads + Tab), SC-63 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G3S06503D SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology Co. Ltd TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G3S06504A SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology Co. Ltd TO-220-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G3S06503C SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology Co. Ltd TO-252-3, DPak (2 Leads + Tab), SC-63 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G3S06504A SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology-GPT TO-220-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G3S06503A SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-220-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G3S06504C SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G3S06503C SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G3S06504D SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G3S06503D SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
FFSH1065B-F085 650V 10A SIC SBD GEN1.5 onsemi TO-247-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 40µA @ 650V 421pF @ 1V, 100kHz 650V 0ns -55°C ~ 175°C Automotive, AEC-Q101
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