• Current - Average Rectified (Io)
  • Manufacturer
Found: 13
  • 650V 10A SIC SBD GEN1.5
    onsemi
    • Manufacturer: onsemi
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Package / Case: TO-247-2
    • Supplier Device Package: TO-247-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Capacitance @ Vr, F: 421pF @ 1V, 100kHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • SIC SCHOTTKY DIODE 650V 4A 2-PIN
    Global Power Technology Co. Ltd
    • Manufacturer: Global Power Technology Co. Ltd
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology Co. Ltd
    • Manufacturer: Global Power Technology Co. Ltd
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • SIC SCHOTTKY DIODE 650V 4A 2-PIN
    Global Power Technology Co. Ltd
    • Manufacturer: Global Power Technology Co. Ltd
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology Co. Ltd
    • Manufacturer: Global Power Technology Co. Ltd
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 4A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 4A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology Co. Ltd
    • Manufacturer: Global Power Technology Co. Ltd
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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  • SIC SCHOTTKY DIODE 650V 4A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
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    • Offers with a price:
    • Offers in stock:
  • SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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    • Offers with a price:
    • Offers in stock:
  • SIC SCHOTTKY DIODE 650V 4A 2-PIN
    Global Power Technology Co. Ltd
    • Manufacturer: Global Power Technology Co. Ltd
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 11.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
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    • Offers with a price:
    • Offers in stock: