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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6620US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1.2A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 220V | 10pF @ 10V, 1MHz | 1.4V @ 1.2A | 220V | 30ns | -65°C ~ 150°C | |
| 1N6631US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1.4A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 4 µA @ 1.1 V | 40pF @ 10V, 1MHz | 1.4V @ 1.4A | 1.1 V | 60ns | -65°C ~ 150°C | |
| UES1103SM | DIODE GEN PURP 150V 2.5A A-MELF | Microchip Technology | SQ-MELF, A | 2.5A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 150V | 975mV @ 2A | 150V | 25ns | 175°C (Max) | ||
| 1N6622US | DIODE GEN PURP 660V 1.2A A-MELF | Microchip Technology | SQ-MELF, A | 1.2A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 660V | 10pF @ 10V, 1MHz | 1.4V @ 1.2A | 660V | 30ns | -65°C ~ 150°C | |
| 1N6628US | DIODE GEN PURP 660V 1.75A A-MELF | Microchip Technology | SQ-MELF, A | 1.75A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 660V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 660V | 30ns | -65°C ~ 150°C | |
| JANTXV1N5806URS | DIODE GEN PURP 150V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 25pF @ 10V, 1MHz | 875mV @ 1A | 150V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| 1N6626US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1.75A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 220V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 220V | 30ns | -65°C ~ 150°C | |
| 1N6627US | DIODE GEN PURP 440V 1.75A A-MELF | Microchip Technology | SQ-MELF, A | 1.75A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 440V | 30ns | -65°C ~ 150°C | |
| UES1102SM/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 2.5A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 3.5pF @ 6V, 1MHz | 100V | 25ns | 150°C (Max) | ||
| JAN1N5804URS | DIODE GEN PURP 100V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 25pF @ 10V, 1MHz | 875mV @ 1A | 100V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| 1N6625US | DIODE GEN PURP 1.1KV 1A A-MELF | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1100V | 10pF @ 10V, 1MHz | 1.75V @ 1A | 1100V | 60ns | -65°C ~ 150°C | |
| 1N6623US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 10pF @ 10V, 1MHz | 1.55V @ 1A | 880V | 50ns | -65°C ~ 150°C | |
| JANTXV1N5802URS | DIODE GEN PURP 50V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 25pF @ 10V, 1MHz | 875mV @ 1A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| JANTX1N5802URS | DIODE GEN PURP 50V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 25pF @ 10V, 1MHz | 875mV @ 1A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| JANTX1N5804URS | DIODE GEN PURP 100V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 25pF @ 10V, 1MHz | 875mV @ 1A | 100V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
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