-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6620US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1.2A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 220V | 10pF @ 10V, 1MHz | 1.4V @ 1.2A | 220V | 30ns | -65°C ~ 150°C | |
| 1N6631US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1.4A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 4 µA @ 1.1 V | 40pF @ 10V, 1MHz | 1.4V @ 1.4A | 1.1 V | 60ns | -65°C ~ 150°C | |
| UES1103SM | DIODE GEN PURP 150V 2.5A A-MELF | Microchip Technology | SQ-MELF, A | 2.5A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 150V | 975mV @ 2A | 150V | 25ns | 175°C (Max) | ||
| 1N6622US | DIODE GEN PURP 660V 1.2A A-MELF | Microchip Technology | SQ-MELF, A | 1.2A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 660V | 10pF @ 10V, 1MHz | 1.4V @ 1.2A | 660V | 30ns | -65°C ~ 150°C | |
| 1N6628US | DIODE GEN PURP 660V 1.75A A-MELF | Microchip Technology | SQ-MELF, A | 1.75A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 660V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 660V | 30ns | -65°C ~ 150°C | |
| JANTXV1N5806URS | DIODE GEN PURP 150V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 25pF @ 10V, 1MHz | 875mV @ 1A | 150V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| 1N6626US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1.75A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 220V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 220V | 30ns | -65°C ~ 150°C | |
| 1N6627US | DIODE GEN PURP 440V 1.75A A-MELF | Microchip Technology | SQ-MELF, A | 1.75A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 440V | 30ns | -65°C ~ 150°C | |
| UES1102SM/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 2.5A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 3.5pF @ 6V, 1MHz | 100V | 25ns | 150°C (Max) | ||
| JAN1N5804URS | DIODE GEN PURP 100V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 25pF @ 10V, 1MHz | 875mV @ 1A | 100V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| 1N6625US | DIODE GEN PURP 1.1KV 1A A-MELF | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1100V | 10pF @ 10V, 1MHz | 1.75V @ 1A | 1100V | 60ns | -65°C ~ 150°C | |
| 1N6623US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 10pF @ 10V, 1MHz | 1.55V @ 1A | 880V | 50ns | -65°C ~ 150°C | |
| JANTXV1N5802URS | DIODE GEN PURP 50V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 25pF @ 10V, 1MHz | 875mV @ 1A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| JANTX1N5802URS | DIODE GEN PURP 50V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 25pF @ 10V, 1MHz | 875mV @ 1A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
| JANTX1N5804URS | DIODE GEN PURP 100V 1A APKG | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 25pF @ 10V, 1MHz | 875mV @ 1A | 100V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
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