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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRT40035RL | DIODE SCHOTTKY 35V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 200A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |
| MBRT60035 | DIODE MODULE 35V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 300A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MBRTA80060 | DIODE SCHOTTKY 60V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 780mV @ 400A | 60V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A | |
| MURT10060R | DIODE ARRAY GP REV POLAR 3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 100A | 600V | 75ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A |
| MBRT20035 | DIODE MODULE 35V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 100A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | |
| MURTA60060 | DIODE MODULE 600V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 300A | 600V | 280ns | -55°C ~ 150°C | 1 Pair Common Cathode | 300A |
| MBRT500150R | DIODE SCHOTTKY 150V 250A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 250A | 150V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | |
| MURT10020 | DIODE ARRAY GP 200V 50A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 200V | 75ns | -55°C ~ 150°C | 1 Pair Common Cathode | 50A |
| MURT10040R | DIODE ARRAY GP REV POLAR3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.35V @ 50A | 400V | 90ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A |
| MSRTA40060A | DIODE MODULE 600V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 400A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A (DC) | |
| MBRTA600150 | DIODE SCHOTTKY 150V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 150V | 880mV @ 300A | 150V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MURTA20040 | DIODE GEN PURP 400V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 100A | 400V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | |
| MBRT300200 | DIODE SCHOTTKY 200V 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 150A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | |
| MSRTA50060(A) | DIODE MODULE 600V 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | |
| MBRT60020L | DIODE SCHOTTKY 20V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 300A | 20V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A |
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