-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRT40035RL | DIODE SCHOTTKY 35V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 200A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |
| MBRT60035 | DIODE MODULE 35V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 300A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MBRTA80060 | DIODE SCHOTTKY 60V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 780mV @ 400A | 60V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A | |
| MURT10060R | DIODE ARRAY GP REV POLAR 3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 100A | 600V | 75ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A |
| MBRT20035 | DIODE MODULE 35V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 100A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | |
| MURTA60060 | DIODE MODULE 600V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 300A | 600V | 280ns | -55°C ~ 150°C | 1 Pair Common Cathode | 300A |
| MBRT500150R | DIODE SCHOTTKY 150V 250A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 250A | 150V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | |
| MURT10020 | DIODE ARRAY GP 200V 50A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 200V | 75ns | -55°C ~ 150°C | 1 Pair Common Cathode | 50A |
| MURT10040R | DIODE ARRAY GP REV POLAR3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.35V @ 50A | 400V | 90ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A |
| MSRTA40060A | DIODE MODULE 600V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 400A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A (DC) | |
| MBRTA600150 | DIODE SCHOTTKY 150V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 150V | 880mV @ 300A | 150V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MURTA20040 | DIODE GEN PURP 400V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 100A | 400V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | |
| MBRT300200 | DIODE SCHOTTKY 200V 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 150A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | |
| MSRTA50060(A) | DIODE MODULE 600V 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | |
| MBRT60020L | DIODE SCHOTTKY 20V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 300A | 20V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A |
- 10
- 15
- 50
- 100