Semiconductors, Transistors, Transistors - Bipolar (BJT) - RF Toshiba Semiconductor and Storage

    • Current Rating (Amps)
    • Transistor Type
    • Operating Temperature
    • Supplier Device Package
    • Power - Output
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Voltage - Test
    • Current - Test
    • Noise Figure (dB Typ @ f)
    • Series
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List Table
Found: 44
  • 2SK3078A(TE12L,F)
    FET RF N-CH 10V 470 MHZ PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-243AA
    • Supplier Device Package: PW-MINI
    • Frequency: 470MHz
    • Voltage - Rated: 10V
    • Current - Test: 50mA
    • Power - Output: 28dbm
    • Transistor Type: N-Channel
    • Gain: 8dB
    • Voltage - Test: 4.5V
    • Current Rating (Amps): 500mA
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  • 2SC5088-O(TE85L,F)
    RF TRANS NPN 12V 7GHZ USQ
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-82A, SOT-343
    • Supplier Device Package: USQ
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 18dB
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • 2SC5087YTE85LF
    RF TRANS NPN 12V 7GHZ SMQ
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-61AA
    • Supplier Device Package: SMQ
    • Power - Max: 150mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 13dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • 2SC5087R(TE85L,F)
    RF TRANS NPN 12V 8GHZ SMQ
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-61AA
    • Supplier Device Package: SMQ
    • Power - Max: 150mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 8GHz
    • Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
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  • 2SC5085-Y(TE85L,F)
    RF TRANS NPN 12V 7GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Gain: 11dB ~ 16.5dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • 2SC4215-Y(TE85L,F)
    RF TRANS NPN 30V 550MHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
    • Frequency - Transition: 550MHz
    • Gain: 17dB ~ 23dB
    • Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
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  • 2SC5065-Y(TE85L,F)
    RF TRANS NPN 12V 7GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
    • Frequency - Transition: 7GHz
    • Gain: 12dB ~ 17dB
    • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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  • 2SK3079ATE12LQ
    MOSF RF N CH 10V PW-X
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-271AA
    • Supplier Device Package: PW-X
    • Frequency: 470MHz
    • Voltage - Rated: 10V
    • Current - Test: 50mA
    • Power - Output: 33.5dBmW
    • Transistor Type: N-Channel
    • Gain: 13.5dB
    • Voltage - Test: 4.5V
    • Current Rating (Amps): 3A
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  • 2SK3074TE12LF
    MOSF RF N CH 30V 1A PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-243AA
    • Supplier Device Package: SC-62
    • Frequency: 520MHz
    • Voltage - Rated: 30V
    • Current - Test: 50mA
    • Power - Output: 630mW
    • Transistor Type: N-Channel
    • Gain: 14.9dB
    • Voltage - Test: 9.6V
    • Current Rating (Amps): 1A
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  • RFM08U9X(TE12L,Q)
    MOSFET N-CH PW-X
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-271AA
    • Supplier Device Package: PW-X
    • Frequency: 520MHz
    • Voltage - Rated: 36V
    • Current - Test: 50mA
    • Power - Output: 7.5W
    • Transistor Type: N-Channel
    • Gain: 11.7dB
    • Voltage - Test: 9.6V
    • Current Rating (Amps): 5A
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  • 2SK209-GR(TE85L,F)
    JFET N-CH SOT23
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59
    • Frequency: 1kHz
    • Current - Test: 500µA
    • Transistor Type: N-Channel JFET
    • Voltage - Test: 10V
    • Noise Figure: 1dB
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  • 2SK3476(TE12L,Q)
    MOSF RF N CH 20V 3A PW-X
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-271AA
    • Supplier Device Package: PW-X
    • Frequency: 520MHz
    • Voltage - Rated: 20V
    • Current - Test: 500mA
    • Power - Output: 7W
    • Transistor Type: N-Channel
    • Gain: 11.4dB
    • Voltage - Test: 7.2V
    • Current Rating (Amps): 3A
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  • 2SK3075(TE12L,Q)
    MOSF RF N CH 30V 5A PW-X
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-271AA
    • Supplier Device Package: PW-X
    • Frequency: 520MHz
    • Voltage - Rated: 30V
    • Current - Test: 50mA
    • Power - Output: 7.5W
    • Transistor Type: N-Channel
    • Gain: 11.7dB
    • Voltage - Test: 9.6V
    • Current Rating (Amps): 5A
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  • 2SK209-BL(TE85L,F)
    JFET N-CH SOT23
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59
    • Frequency: 1kHz
    • Current - Test: 500µA
    • Transistor Type: N-Channel JFET
    • Voltage - Test: 10V
    • Noise Figure: 1dB
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  • 2SK209-Y(TE85L,F)
    JFET N-CH SOT23
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SC-59
    • Frequency: 1kHz
    • Current - Test: 500µA
    • Transistor Type: N-Channel JFET
    • Voltage - Test: 10V
    • Noise Figure: 1dB
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