• Manufacturer
  • Frequency
    • Current Rating (Amps)
    • Transistor Type
    • Operating Temperature
    • Supplier Device Package
    • Power - Output
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Voltage - Test
    • Current - Test
    • Noise Figure (dB Typ @ f)
    • Series
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List Table
Found: 44
  • 2SC5065-O(TE85L,F)
    RF TRANS NPN 12V 7GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • MT3S20P(TE12L,F)
    RF TRANS NPN 12V 7GHZ PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PW-MINI
    • Power - Max: 1.8W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Frequency - Transition: 7GHz
    • Gain: 16.5dB
    • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
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  • MT3S113P(TE12L,F)
    RF TRANS NPN 5.3V 7.7GHZ PW-MINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: PW-MINI
    • Power - Max: 1.6W
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 5.3V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
    • Frequency - Transition: 7.7GHz
    • Gain: 10.5dB
    • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
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  • 2SC5066-O,LF
    RF TRANS NPN 12V 7GHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 30mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • MT4S300U(TE85L,O,F
    X34 PB-F RADIO-FREQUENCY SIGE HE
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-82A, SOT-343
    • Supplier Device Package: USQ
    • Power - Max: 250mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 50mA
    • Voltage - Collector Emitter Breakdown (Max): 4V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
    • Frequency - Transition: 26.5GHz
    • Gain: 16.9dB
    • Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
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  • MT3S20TU(TE85L)
    RF TRANS NPN 12V 7GHZ UFM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 3-SMD, Flat Lead
    • Supplier Device Package: UFM
    • Power - Max: 900mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
    • Frequency - Transition: 7GHz
    • Gain: 12dB
    • Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V
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  • 2SC5085-O(TE85L,F)
    RF TRANS NPN 12V 7GHZ USM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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  • 2SC5086-Y,LF
    RF TRANS NPN 12V 7GHZ SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 125°C (TJ)
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 80mA
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
    • Frequency - Transition: 7GHz
    • Noise Figure (dB Typ @ f): 1dB @ 500MHz
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