Semiconductors, Transistors, Transistors - IGBTs - Arrays Pmax 1042W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 4
  • APT75GP120B2G
    IGBT 1200V 100A 1042W TMAX
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 1042W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 75A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
    • Current - Collector Pulsed (Icm): 300A
    • Switching Energy: 1620µJ (on), 2500µJ (off)
    • Gate Charge: 320nC
    • Td (on/off) @ 25°C: 20ns/163ns
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  • VS-GA200TH60S
    IGBT MOD 600V 260A INT-A-PAK
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Double INT-A-PAK (3 + 4)
    • Supplier Device Package: Double INT-A-PAK
    • Configuration: Half Bridge
    • Power - Max: 1042W
    • Current - Collector (Ic) (Max): 260A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 5µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A (Typ)
    • Input Capacitance (Cies) @ Vce: 13.1nF @ 25V
    • NTC Thermistor: No
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  • VS-GT300YH120N
    IGBT MOD 1200V 341A INT-A-PAK
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Double INT-A-PAK (3 + 8)
    • Supplier Device Package: Double INT-A-PAK
    • Configuration: Half Bridge
    • Power - Max: 1042W
    • Current - Collector (Ic) (Max): 341A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 300µA
    • Input: Standard
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
    • Input Capacitance (Cies) @ Vce: 36nF @ 30V
    • NTC Thermistor: No
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  • APT75GP120B2G
    IGBT 1200V 100A 1042W TMAX
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 1042W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 75A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
    • Current - Collector Pulsed (Icm): 300A
    • Switching Energy: 1620µJ (on), 2500µJ (off)
    • Gate Charge: 320nC
    • Td (on/off) @ 25°C: 20ns/163ns
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