• Power - Max
  • Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Configuration
Operating Temperature
Supplier Device Package
Input Type
IGBT Type
Current - Collector Cutoff (Max)
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Test Condition
Current - Collector Pulsed (Icm)
NTC Thermistor
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Series
APT75GP120B2G IGBT 1200V 100A 1042W TMAX Microchip Technology TO-247-3 Variant 100A 1200V 1042W Through Hole -55°C ~ 150°C (TJ) Standard PT 3.9V @ 15V, 75A 600V, 75A, 5Ohm, 15V 300A 1620µJ (on), 2500µJ (off) 320nC 20ns/163ns POWER MOS 7®
APT75GP120B2G IGBT 1200V 100A 1042W TMAX Microsemi Corporation TO-247-3 Variant 100A 1200V 1042W Through Hole -55°C ~ 150°C (TJ) Standard PT 3.9V @ 15V, 75A 600V, 75A, 5Ohm, 15V 300A 1620µJ (on), 2500µJ (off) 320nC 20ns/163ns POWER MOS 7®
VS-GT300YH120N IGBT MOD 1200V 341A INT-A-PAK Vishay General Semiconductor - Diodes Division Double INT-A-PAK (3 + 8) 341A 1200V 1042W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) Double INT-A-PAK Trench 300µA 2.17V @ 15V, 300A (Typ) 36nF @ 30V Standard No
VS-GA200TH60S IGBT MOD 600V 260A INT-A-PAK Vishay General Semiconductor - Diodes Division Double INT-A-PAK (3 + 4) 260A 600V 1042W Chassis Mount Half Bridge -40°C ~ 150°C (TJ) Double INT-A-PAK 5µA 1.9V @ 15V, 200A (Typ) 13.1nF @ 25V Standard No
  • 10
  • 15
  • 50
  • 100