Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 101A

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 4
  • NXH450B100H4Q2F2PG
    1000V,75A FSIII IGBT, MID SPEED
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Configuration: 2 Independent
    • Power - Max: 234W
    • Current - Collector (Ic) (Max): 101A
    • Voltage - Collector Emitter Breakdown (Max): 1000V
    • Current - Collector Cutoff (Max): 600µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
    • Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
    • NTC Thermistor: Yes
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  • NXH450B100H4Q2F2SG
    1000V,75A FSIII IGBT, MID SPEED
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: 56-PIM (93x47)
    • Configuration: 2 Independent
    • Power - Max: 234W
    • Current - Collector (Ic) (Max): 101A
    • Voltage - Collector Emitter Breakdown (Max): 1000V
    • Current - Collector Cutoff (Max): 600µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
    • Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
    • NTC Thermistor: Yes
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  • APT40GP90B2DQ2G
    IGBT 900V 101A 543W TMAX
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 543W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 101A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 40A, 4.3Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
    • Current - Collector Pulsed (Icm): 160A
    • Switching Energy: 795µJ (off)
    • Gate Charge: 145nC
    • Td (on/off) @ 25°C: 14ns/90ns
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  • APT40GP90B2DQ2G
    IGBT 900V 101A 543W TMAX
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 543W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 101A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 40A, 4.3Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
    • Current - Collector Pulsed (Icm): 160A
    • Switching Energy: 795µJ (off)
    • Gate Charge: 145nC
    • Td (on/off) @ 25°C: 14ns/90ns
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