- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Configuration
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
IGBT Type
|
Current - Collector Cutoff (Max)
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT40GP90B2DQ2G | IGBT 900V 101A 543W TMAX | Microchip Technology | TO-247-3 Variant | 101A | 900V | 543W | Through Hole | -55°C ~ 150°C (TJ) | Standard | PT | 3.9V @ 15V, 40A | 600V, 40A, 4.3Ohm, 15V | 160A | 795µJ (off) | 145nC | 14ns/90ns | POWER MOS 7® | ||||||
| APT40GP90B2DQ2G | IGBT 900V 101A 543W TMAX | Microsemi Corporation | TO-247-3 Variant | 101A | 900V | 543W | Through Hole | -55°C ~ 150°C (TJ) | Standard | PT | 3.9V @ 15V, 40A | 600V, 40A, 4.3Ohm, 15V | 160A | 795µJ (off) | 145nC | 14ns/90ns | POWER MOS 7® | ||||||
| NXH450B100H4Q2F2PG | 1000V,75A FSIII IGBT, MID SPEED | onsemi | 101A | 1000V | 234W | Surface Mount | 2 Independent | -40°C ~ 150°C (TJ) | 600µA | 2.25V @ 15V, 150A | 9.342 nF @ 20 V | Standard | Yes | ||||||||||
| NXH450B100H4Q2F2SG | 1000V,75A FSIII IGBT, MID SPEED | onsemi | Module | 101A | 1000V | 234W | Chassis Mount | 2 Independent | -40°C ~ 150°C (TJ) | 56-PIM (93x47) | 600µA | 2.25V @ 15V, 150A | 9.342 nF @ 20 V | Standard | Yes |
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