• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 46889
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Noise Figure
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
FDS8928A POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor 8-SOIC 900mW Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 30V, 20V 5.5A, 4A Logic Level Gate 30mOhm @ 5.5A, 4.5V 1V @ 250µA 28nC @ 4.5V 900pF @ 10V
BSC031N06NS3GATMA1 MOSFET N-CH 60V 100A TDSON-8 Infineon Technologies PG-TDSON-8-1 Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta), 139W (Tc) 60V 100A (Tc) 3.1mOhm @ 50A, 10V 10V 4V @ 93µA 130nC @ 10V 11000pF @ 30V ±20V OptiMOS™
IPA075N15N3GXKSA1 MOSFET N-CH 150V 43A TO220-3 Infineon Technologies PG-TO220-3 Through Hole TO-220-3 Full Pack MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 39W (Tc) 150V 43A (Tc) 7.5mOhm @ 43A, 10V 8V, 10V 4V @ 270µA 93nC @ 10V 7280pF @ 75V ±20V OptiMOS™
IRFS7730TRLPBF MOSFET N-CH 75V 195A D2PAK Infineon Technologies D²PAK (TO-263AB) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 375W (Tc) 75V 195A (Tc) 2.6mOhm @ 100A, 10V 6V, 10V 3.7V @ 250µA 407nC @ 10V 13660pF @ 25V ±20V HEXFET®, StrongIRFET™
IXFH74N20P MOSFET N-CH 200V 74A TO-247 IXYS TO-247AD (IXFH) Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 480W (Tc) 200V 74A (Tc) 34mOhm @ 37A, 10V 10V 5V @ 4mA 107nC @ 10V 3300pF @ 25V ±20V PolarHT™ HiPerFET™
IXFP72N20X3 200V/72A ULTRA JUNCTION X3-CLASS IXYS TO-220 Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 320W (Tc) 200V 72A (Tc) 20mOhm @ 36A, 10V 10V 4.5V @ 1.5mA 55nC @ 10V 3780pF @ 25V ±20V HiPerFET™
CPC3730C MOSFET N-CH 350V SOT89 IXYS Integrated Circuits Division SOT-89 Surface Mount TO-243AA MOSFET (Metal Oxide) -55°C ~ 125°C (TJ) N-Channel 1.6W (Ta) 350V Depletion Mode 35Ohm @ 140mA, 0V 0V 200pF @ 25V ±20V
NVMFS6H848NT1G MOSFET N-CH 80V 6DFN onsemi 5-DFN (5x6) (8-SOFL) Surface Mount 8-PowerTDFN, 5 Leads MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 3.7W (Ta), 73W (Tc) 80V 13A (Ta), 57A (Tc) 9.4mOhm @ 10A, 10V 10V 4V @ 70µA 16nC @ 10V 1180pF @ 40V ±20V Automotive, AEC-Q101
NVMFS5C460NLT3G MOSFET N-CH 40V SO8FL onsemi 5-DFN (5x6) (8-SOFL) Surface Mount 8-PowerTDFN MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 3.6W (Ta), 50W (Tc) 40V 4.5mOhm @ 35A, 10V 4.5V, 10V 2V @ 250µA 23nC @ 10V 1300pF @ 25V ±20V
BUK7E1R6-30E,127 BUK7E1R6-30E - POWER, I2PAK Rochester Electronics, LLC I2PAK Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 349W (Tc) 30V 120A (Tc) 1.6mOhm @ 25A, 10V 10V 4V @ 1mA 154nC @ 10V 11.96pF @ 25V ±20V TrenchMOS™
STL140N6F7 MOSFET N-CH 60V 145A 8PWRFLAT STMicroelectronics PowerFlat™ (5x6) Surface Mount 8-PowerVDFN MOSFET (Metal Oxide) 175°C (TJ) N-Channel 4.8W (Ta), 125W (Tc) 60V 145A (Tc) 2.5mOhm @ 16A, 10V 10V 4V @ 1mA 40nC @ 10V 2700pF @ 25V ±20V DeepGATE™, STripFET™ VII
STP120NH03L MOSFET N-CH 30V 60A TO-220 STMicroelectronics TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 110W (Tc) 30V 60A (Tc) 5.5mOhm @ 30A, 10V 5V, 10V 3V @ 250µA 77nC @ 10V 4100pF @ 25V ±20V STripFET™
SSM6J503NU,LF MOSFET P CH 20V 6A 2-2AA1A Toshiba Semiconductor and Storage 6-UDFNB (2x2) Surface Mount 6-WDFN Exposed Pad MOSFET (Metal Oxide) 150°C (TJ) P-Channel 1W (Ta) 20V 6A (Ta) 32.4mOhm @ 3A, 4.5V 1.5V, 4.5V 1V @ 1mA 12.8nC @ 10V 840pF @ 10V ±8V U-MOSVI
SI5513CDC-T1-E3 MOSFET N/P-CH 20V 4A 1206-8 Vishay Siliconix 1206-8 ChipFET™ 3.1W Surface Mount 8-SMD, Flat Lead -55°C ~ 150°C (TJ) N and P-Channel 20V 4A, 3.7A Logic Level Gate 55mOhm @ 4.3A, 4.5V 1.5V @ 250µA 4.2nC @ 5V 285pF @ 10V TrenchFET®
SIRA18DP-T1-RE3 MOSFET N-CH 30V 33A POWERPAKSO-8 Vishay Siliconix PowerPAK® SO-8 Surface Mount PowerPAK® SO-8 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 14.7W (Tc) 30V 33A (Tc) 7.5mOhm @ 10A, 10V 4.5V, 10V 2.4V @ 250µA 21.5nC @ 10V 1000pF @ 15V +20V, -16V TrenchFET®
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