- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS8928A | POWER FIELD-EFFECT TRANSISTOR, 5 | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V, 20V | 5.5A, 4A | Logic Level Gate | 30mOhm @ 5.5A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 900pF @ 10V | ||||||||||||||
| IRLZ44NLPBF | MOSFET N-CH 55V 47A TO-262 | Infineon Technologies | TO-262 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 110W (Tc) | 55V | 47A (Tc) | 22mOhm @ 25A, 10V | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | HEXFET® | |||||||||||
| IPA075N15N3GXKSA1 | MOSFET N-CH 150V 43A TO220-3 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 39W (Tc) | 150V | 43A (Tc) | 7.5mOhm @ 43A, 10V | 8V, 10V | 4V @ 270µA | 93nC @ 10V | 7280pF @ 75V | ±20V | OptiMOS™ | |||||||||||
| IRFS7730TRLPBF | MOSFET N-CH 75V 195A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 75V | 195A (Tc) | 2.6mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | ±20V | HEXFET®, StrongIRFET™ | |||||||||||
| BSC031N06NS3GATMA1 | MOSFET N-CH 60V 100A TDSON-8 | Infineon Technologies | PG-TDSON-8-1 | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 139W (Tc) | 60V | 100A (Tc) | 3.1mOhm @ 50A, 10V | 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | ±20V | OptiMOS™ | |||||||||||
| IXFP72N20X3 | 200V/72A ULTRA JUNCTION X3-CLASS | IXYS | TO-220 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 320W (Tc) | 200V | 72A (Tc) | 20mOhm @ 36A, 10V | 10V | 4.5V @ 1.5mA | 55nC @ 10V | 3780pF @ 25V | ±20V | HiPerFET™ | |||||||||||
| IXFH74N20P | MOSFET N-CH 200V 74A TO-247 | IXYS | TO-247AD (IXFH) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 480W (Tc) | 200V | 74A (Tc) | 34mOhm @ 37A, 10V | 10V | 5V @ 4mA | 107nC @ 10V | 3300pF @ 25V | ±20V | PolarHT™ HiPerFET™ | |||||||||||
| CPC3730C | MOSFET N-CH 350V SOT89 | IXYS Integrated Circuits Division | SOT-89 | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | -55°C ~ 125°C (TJ) | N-Channel | 1.6W (Ta) | 350V | Depletion Mode | 35Ohm @ 140mA, 0V | 0V | 200pF @ 25V | ±20V | ||||||||||||||
| NVMFS6H848NT1G | MOSFET N-CH 80V 6DFN | onsemi | 5-DFN (5x6) (8-SOFL) | Surface Mount | 8-PowerTDFN, 5 Leads | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.7W (Ta), 73W (Tc) | 80V | 13A (Ta), 57A (Tc) | 9.4mOhm @ 10A, 10V | 10V | 4V @ 70µA | 16nC @ 10V | 1180pF @ 40V | ±20V | Automotive, AEC-Q101 | |||||||||||
| NE4210S01-T1B | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | SMD | 12GHz | 4V | 15mA | 4-SMD | HFET | 13dB | 0.5dB | 2V | 10mA | |||||||||||||||||
| STL140N6F7 | MOSFET N-CH 60V 145A 8PWRFLAT | STMicroelectronics | PowerFlat™ (5x6) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 175°C (TJ) | N-Channel | 4.8W (Ta), 125W (Tc) | 60V | 145A (Tc) | 2.5mOhm @ 16A, 10V | 10V | 4V @ 1mA | 40nC @ 10V | 2700pF @ 25V | ±20V | DeepGATE™, STripFET™ VII | |||||||||||
| STP120NH03L | MOSFET N-CH 30V 60A TO-220 | STMicroelectronics | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 110W (Tc) | 30V | 60A (Tc) | 5.5mOhm @ 30A, 10V | 5V, 10V | 3V @ 250µA | 77nC @ 10V | 4100pF @ 25V | ±20V | STripFET™ | |||||||||||
| SIRA18DP-T1-RE3 | MOSFET N-CH 30V 33A POWERPAKSO-8 | Vishay Siliconix | PowerPAK® SO-8 | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 14.7W (Tc) | 30V | 33A (Tc) | 7.5mOhm @ 10A, 10V | 4.5V, 10V | 2.4V @ 250µA | 21.5nC @ 10V | 1000pF @ 15V | +20V, -16V | TrenchFET® | |||||||||||
| SI4532ADY-T1-GE3 | MOSFET N/P-CH 30V 3.7A 8-SOIC | Vishay Siliconix | 8-SOIC | 1.13W, 1.2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 3.7A, 3A | Logic Level Gate | 53mOhm @ 4.9A, 10V | 1V @ 250µA | 16nC @ 10V | TrenchFET® | ||||||||||||||
| SI5513CDC-T1-E3 | MOSFET N/P-CH 20V 4A 1206-8 | Vishay Siliconix | 1206-8 ChipFET™ | 3.1W | Surface Mount | 8-SMD, Flat Lead | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 4A, 3.7A | Logic Level Gate | 55mOhm @ 4.3A, 4.5V | 1.5V @ 250µA | 4.2nC @ 5V | 285pF @ 10V | TrenchFET® |
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