• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 46889
  • TAV-541+
    RF MOSFET E-PHEMT 3V FG873
    Mini-Circuits
    • Manufacturer: Mini-Circuits
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: FG873
    • Frequency: 450MHz ~ 6GHz
    • Voltage - Rated: 5V
    • Current - Test: 60mA
    • Power - Output: 21.1dB
    • Transistor Type: E-pHEMT
    • Gain: 23.8dB
    • Voltage - Test: 3V
    • Noise Figure: 1.8dB @ 5.8GHz
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  • NTMYS011N04CTWG
    FET 40V 35A
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-1023, 4-LFPAK
    • Supplier Device Package: 4-LFPAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 20µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • NTHD5902T1
    MOSFET 2N-CH 30V 2.9A CHIPFET
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: ChipFET™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 2.9A
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
    • Power - Max: 1.1W
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  • BLF6G27L-40P,118
    RF FET LDMOS 65V 17DB SOT1121A
    Ampleon USA Inc.
    • Manufacturer: Ampleon USA Inc.
    • Package / Case: SOT-1121A
    • Supplier Device Package: LDMOST
    • Frequency: 2.5GHz ~ 2.7GHz
    • Voltage - Rated: 65V
    • Current - Test: 450mA
    • Power - Output: 12W
    • Transistor Type: LDMOS (Dual), Common Source
    • Gain: 17.5dB
    • Voltage - Test: 28V
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  • BUK7K25-40E,115
    MOSFET 2N-CH 40V 27A LFPAK56D
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Series: Automotive, AEC-Q101, TrenchMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-1205, 8-LFPAK56
    • Supplier Device Package: LFPAK56D
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 27A
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 25V
    • Power - Max: 32W
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  • PXFE211507FC-V1-R0
    150W, SI LDMOS, 28V, 2110-2170MH
    Wolfspeed, Inc.
    • Manufacturer: Wolfspeed, Inc.
    • Package / Case: H-37248G-4/2
    • Supplier Device Package: H-37248G-4/2
    • Frequency: 2.11GHz ~ 2.17GHz
    • Voltage - Rated: 65V
    • Current - Test: 900mA
    • Power - Output: 170W
    • Transistor Type: LDMOS
    • Gain: 18dB
    • Voltage - Test: 28V
    • Current Rating (Amps): 10µA
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  • IRLL2703TR
    MOSFET N-CH 30V 3.9A SOT223
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: SOT-223
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
    • Vgs (Max): ±16V
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  • HUF76121S3
    N-CHANNEL POWER MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
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  • AUIRLSL3036
    MOSFET N-CH 60V 270A TO262
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 380W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • HUF75333P3
    MOSFET N-CH 55V 60A TO-220AB
    onsemi
    • Manufacturer: onsemi
    • Series: UltraFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF6722MTR1PBF
    MOSFET N-CH 30V 13A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric MP
    • Supplier Device Package: DIRECTFET™ MP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • BLF988,112
    RF FET LDMOS 110V 20.8DB SOT539A
    Ampleon USA Inc.
    • Manufacturer: Ampleon USA Inc.
    • Package / Case: SOT-539A
    • Supplier Device Package: SOT539A
    • Frequency: 860MHz
    • Voltage - Rated: 110V
    • Current - Test: 1.3A
    • Power - Output: 250W
    • Transistor Type: LDMOS (Dual), Common Source
    • Gain: 20.8dB
    • Voltage - Test: 50V
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  • SI8900EDB-T2-E1
    MOSFET 2N-CH 20V 5.4A 10-MFP
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-UFBGA, CSPBGA
    • Supplier Device Package: 10-Micro Foot™ CSP (2x5)
    • FET Type: 2 N-Channel (Dual) Common Drain
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.4A
    • Vgs(th) (Max) @ Id: 1V @ 1.1mA
    • Power - Max: 1W
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  • FKI06108
    MOSFET N-CH 60V 39A TO-220F
    Sanken
    • Manufacturer: Sanken
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28.5A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 650µA
    • Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 38W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IPB039N04LGATMA1
    MOSFET N-CH 40V 80A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 45µA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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