• Manufacturer: Rochester Electronics, LLC
• Package / Case: 4-SMD
• Supplier Device Package: SMD
• Frequency: 12GHz
• Voltage - Rated: 4V
• Current - Test: 10mA
• Transistor Type: HFET
• Gain: 13dB
• Voltage - Test: 2V
• Noise Figure: 0.5dB
• Current Rating (Amps): 15mA

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package: TO-262
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs (Max): ±16V

• Manufacturer: Vishay Siliconix
• Series: TrenchFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
• Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Power - Max: 1.13W, 1.2W

• Manufacturer: Vishay Siliconix
• Series: TrenchFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 14.7W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): +20V, -16V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PG-TDSON-8-1
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id: 4V @ 93µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Vishay Siliconix
• Series: TrenchFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 1206-8 ChipFET™
• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
• Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
• Power - Max: 3.1W

• Manufacturer: IXYS
• Series: PolarHT™ HiPerFET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXFH)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
• Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 480W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: IXYS
• Series: HiPerFET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 320W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: PG-TO220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 75V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 39W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®, StrongIRFET™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 375W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs (Max): ±20V

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V, 20V
• Current - Continuous Drain (Id) @ 25°C: 5.5A, 4A
• Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
• Power - Max: 900mW

• Manufacturer: IXYS Integrated Circuits Division
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 350V
• Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.6W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: STMicroelectronics
• Series: STripFET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 110W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: onsemi
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
• Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 4V @ 70µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: STMicroelectronics
• Series: DeepGATE™, STripFET™ VII
• Mounting Type: Surface Mount
• Operating Temperature: 175°C (TJ)
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PowerFlat™ (5x6)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
• Rds On (Max) @ Id, Vgs: 2.5mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 4.8W (Ta), 125W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V