• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
IRF7665S2TRPBF MOSFET N-CH 100V DIRECTFET SB Infineon Technologies DIRECTFET SB Surface Mount DirectFET™ Isometric SB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 2.4W (Ta), 30W (Tc) 100V 4.1A (Ta), 14.4A (Tc) 62mOhm @ 8.9A, 10V 10V 5V @ 25µA 13nC @ 10V 515pF @ 25V ±20V
AUIRF7665S2TR MOSFET N-CH 100V 77A DIRECTFET2 Infineon Technologies DIRECTFET SB Surface Mount DirectFET™ Isometric SB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 2.4W (Ta), 30W (Tc) 100V 4.1A (Ta), 14.4A (Tc) 62mOhm @ 8.9A, 10V 10V 5V @ 25µA 13nC @ 10V 515pF @ 25V ±20V HEXFET®
IRF7665S2TR1PBF MOSFET N-CH 100V 4.1A DFET SB Infineon Technologies DIRECTFET SB Surface Mount DirectFET™ Isometric SB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 2.4W (Ta), 30W (Tc) 100V 4.1A (Ta), 14.4A (Tc) 62mOhm @ 8.9A, 10V 10V 5V @ 25µA 13nC @ 10V 515pF @ 25V ±20V
AUIRF7640S2TR MOSFET N-CH 60V 77A DIRECTFET-S2 Infineon Technologies DIRECTFET SB Surface Mount DirectFET™ Isometric SB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 2.4W (Ta), 30W (Tc) 60V 5.8A (Ta), 21A (Tc) 36mOhm @ 13A, 10V 10V 5V @ 25µA 11nC @ 10V 450pF @ 25V ±20V HEXFET®
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