• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
  • IRF7665S2TRPBF
    MOSFET N-CH 100V DIRECTFET SB
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric SB
    • Supplier Device Package: DIRECTFET SB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF7665S2TR
    MOSFET N-CH 100V 77A DIRECTFET2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric SB
    • Supplier Device Package: DIRECTFET SB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7665S2TR1PBF
    MOSFET N-CH 100V 4.1A DFET SB
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric SB
    • Supplier Device Package: DIRECTFET SB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRF7640S2TR
    MOSFET N-CH 60V 77A DIRECTFET-S2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric SB
    • Supplier Device Package: DIRECTFET SB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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