-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFH3707TR2PBF | MOSFET N-CH 30V 12A PQFN33 | Infineon Technologies | 8-PQFN (3x3) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 30V | 12A (Ta), 29A (Tc) | 12.4mOhm @ 12A, 10V | 4.5V, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | 755pF @ 15V | ±20V | HEXFET® |
| IRFH3702TR2PBF | MOSFET N-CH 30V 16A 8PQFN | Infineon Technologies | 8-PQFN (3x3) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | N-Channel | 30V | 16A (Ta), 42A (Tc) | 7.1mOhm @ 16A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1510pF @ 15V | HEXFET® | ||||
| IRFHM3911TRPBF | MOSFET N-CH 100V 10A PQFN | Infineon Technologies | 8-PQFN (3x3) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta), 29W (Tc) | 100V | 3.2A (Ta), 20A (Tc) | 115mOhm @ 6.3A, 10V | 10V | 4V @ 35µA | 26nC @ 10V | 760pF @ 50V | ±20V | HEXFET® |
| IRFH3702TRPBF | MOSFET N-CH 30V 16A 8PQFN | Infineon Technologies | 8-PQFN (3x3) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 30V | 16A (Ta), 42A (Tc) | 7.1mOhm @ 16A, 10V | 4.5V, 10V | 2.35V @ 25µA | 14nC @ 4.5V | 1510pF @ 15V | ±20V | HEXFET® |
| IRFHM4231TRPBF | MOSFET N-CH 25V 40A PQFN | Infineon Technologies | 8-PQFN (3x3) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.7W (Ta), 29W (Tc) | 25V | 40A (Tc) | 3.4mOhm @ 30A, 10V | 4.5V, 10V | 2.1V @ 35µA | 20nC @ 10V | 1270pF @ 13V | ±20V | HEXFET® |
| IRFH3707TRPBF | MOSFET N-CH 30V 12A PQFN56 | Infineon Technologies | 8-PQFN (3x3) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.8W (Ta) | 30V | 12A (Ta), 29A (Tc) | 12.4mOhm @ 12A, 10V | 4.5V, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | 755pF @ 15V | ±20V | HEXFET® |
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