• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 6
  • IRFH3707TR2PBF
    MOSFET N-CH 30V 12A PQFN33
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (3x3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.8W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH3702TR2PBF
    MOSFET N-CH 30V 16A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (3x3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
    • Technology: MOSFET (Metal Oxide)
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  • IRFHM3911TRPBF
    MOSFET N-CH 100V 10A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3x3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 20A (Tc)
    • Rds On (Max) @ Id, Vgs: 115mOhm @ 6.3A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 35µA
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.8W (Ta), 29W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH3702TRPBF
    MOSFET N-CH 30V 16A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (3x3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.8W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFHM4231TRPBF
    MOSFET N-CH 25V 40A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (3x3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 35µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH3707TRPBF
    MOSFET N-CH 30V 12A PQFN56
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (3x3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.8W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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