- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CG2H80045D-GP4 | 45W, GAN HEMT, 28V, DC-8.0GHZ, B | Cree/Wolfspeed | Die | 45W | 8GHz | 120V | Die | HEMT | 15dB | 28V | 500mA | GaN | ||||||||||||||||
PXAC182002FC-V1-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | ||||||||||||||||||||||||||
C3M0065100J | MOSFET N-CH 1000V 35A D2PAK-7 | Cree/Wolfspeed | D2PAK-7 | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 113.5W (Tc) | 1000V | 35A (Tc) | 78mOhm @ 20A, 15V | 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | +15V, -4V | C3M™ | ||||||||||
CGHV96100F2 | RF MOSFET HEMT 40V 440210 | Cree/Wolfspeed | 440210 | 131W | 7.9GHz ~ 9.6GHz | 100V | 12A | 440210 | HEMT | 10.2dB | 40V | 1A | GaN | |||||||||||||||
PXAE213708NB-V1-R2 | SI LDMOS AMP 370W 2110-2170MHZ | Cree/Wolfspeed | PG-HB2SOF-8-1 | 54W | 2.11GHz ~ 2.18GHz | 65V | 10µA | PG-HB2SOF-8-1 | LDMOS | 16dB | 29V | 750mA | ||||||||||||||||
PXAE1837078NB-V1-R2 | SI LDMOS AMP 300W 1805-1880MHZ | Cree/Wolfspeed | ||||||||||||||||||||||||||
PTFB090901FA-V2-R0 | IC AMP RF LDMOS H-37265-2 | Cree/Wolfspeed | H-37265-2 | 25W | 960MHz | 65V | H-36265-2 | LDMOS | 19.5dB | 28V | 650mA | |||||||||||||||||
PTFC260202FC-V1-R0 | IC AMP RF LDMOS H-37248-4 | Cree/Wolfspeed | H-37248-4 | 5W | 2.69GHz | 65V | H-37248-4 | LDMOS (Dual) | 20dB | 28V | 170mA | |||||||||||||||||
PTVA120251EA-V2-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | ||||||||||||||||||||||||||
PTFB211503EL-V1-R0 | IC AMP RF LDMOS H-33288-6 | Cree/Wolfspeed | H-33288-6 | 32W | 2.17GHz | 65V | H-33288-6 | LDMOS | 18dB | 30V | 1.2A | |||||||||||||||||
PTFC261402FC-V1 | IC AMP RF LDMOS | Cree/Wolfspeed | 28W | 2.69GHz | 65V | LDMOS | 18dB | 28V | 900mA | |||||||||||||||||||
C3M0021120D | 1200V, 21 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -40°C ~ 175°C (TJ) | N-Channel | 469W (Tc) | 1200V | 100A (Tc) | 28.8mOhm @ 50A, 15V | 15V | 3.6V @ 17.7mA | 160nC @ 15V | 4818pF @ 1000V | +15V, -4V | C3M™ | ||||||||||
CGH40025F | RF MOSFET HEMT 28V 440166 | Cree/Wolfspeed | 440166 | 30W | 0Hz ~ 6GHz | 84V | 7A | 440166 | HEMT | 13dB | 28V | 250mA | GaN | |||||||||||||||
PTFB092707FH-V1-R0 | IC AMP RF LDMOS H-37288L-4 | Cree/Wolfspeed | H-37288L-4/2 | 60W | 960MHz | 65V | H-37288L-4/2 | LDMOS | 19dB | 28V | 2.15A | |||||||||||||||||
PTFB210801FA-V1-R250 | FET RF LDMOS 80W H37265-2 | Cree/Wolfspeed | H-37265-2 | 20W | 2.17GHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18.5dB | 28V | 750mA |
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