• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
CGHV1J025D-GP4 RF MOSFET HEMT 40V DIE Cree/Wolfspeed Die 25W 18GHz 100V Die HEMT 17dB 40V 120mA GaN
CPMF-1200-S080B MOSFET N-CHANNEL 1200V 50A DIE Cree/Wolfspeed Die Surface Mount Die SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 313mW (Tj) 1200V 50A (Tj) 110mOhm @ 20A, 20V 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V +25V, -5V Z-FET™
PTAC240502FC-V1-R0 IC AMP RF LDMOS H-37248-4 Cree/Wolfspeed H-37248-4 50W 2.4GHz 65V 10µA H-37248-4 LDMOS 14.3dB 28V 120mA
PXFE211507FC-V1-R0 150W, SI LDMOS, 28V, 2110-2170MH Cree/Wolfspeed H-37248G-4/2 170W 2.11GHz ~ 2.17GHz 65V 10µA H-37248G-4/2 LDMOS 18dB 28V 900mA
CGH40180PP RF MOSFET HEMT 28V 440199 Cree/Wolfspeed 440199 220W 0Hz ~ 2.5GHz 84V 56A 440199 HEMT 19dB 28V 2A GaN
C3M0075120J-TR 1200V, 75 MOHM, G3 SIC MOSFET ON Cree/Wolfspeed TO-263-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113.6W (Tc) 1200V 30A (Tc) 90mOhm @ 20A, 15V 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V +15V, -4V C3M™
PTFC262157FH-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed
PTVA104501EH-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed
CGHV35150F RF MOSFET HEMT 50V 440193 Cree/Wolfspeed 440193 170W 2.9GHz ~ 3.5GHz 125V 12A 440193 HEMT 13.3dB 50V 500mA GaN
PTFB211503EL-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed H-33288-6 32W 2.17GHz 65V H-33288-6 LDMOS 18dB 30V 1.2A
C3M0021120K 1200V, 21 MOHM, G3 SIC MOSFET Cree/Wolfspeed TO-247-4L Through Hole TO-247-4 SiCFET (Silicon Carbide) -40°C ~ 175°C (TJ) N-Channel 469W (Tc) 1200V 100A (Tc) 28.8mOhm @ 50A, 15V 15V 3.6V @ 17.7mA 162nC @ 15V 4818pF @ 1000V +15V, -4V C3M™
CAS325M12HM2 MOSFET 2N-CH 1200V 444A MODULE Cree/Wolfspeed Module 3000W Module 175°C (TJ) 2 N-Channel (Half Bridge) 1200V (1.2kV) 444A (Tc) Silicon Carbide (SiC) 4.3mOhm @ 400A, 20V 4V @ 105mA 1127nC @ 20V Z-Rec®
C3M0120100K MOSFET N-CH 1000V 22A TO247-4L Cree/Wolfspeed TO-247-4L Through Hole TO-247-4 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 83W (Tc) 1000V 22A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 21.5nC @ 15V 350pF @ 600V ±15V C3M™
PXAC261212FC-V1 IC AMP RF LDMOS Cree/Wolfspeed H-37248-4 28W 2.69GHz 65V H-37248-4 LDMOS 15dB 28V 280mA
PXAC241702FC-V1 IC AMP RF LDMOS Cree/Wolfspeed H-37248-4 28W 2.4GHz 65V H-37248-4 LDMOS 16.5dB 28V 360mA
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