• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Noise Figure
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
PTVA092407NF-V1-R5 IC RF LDMOS FET 4HBSOF Cree/Wolfspeed PG-HBSOF-4-1 240W 869MHz ~ 960MHz 105V 10µA HBSOF-4-1 LDMOS 22.5dB 48V 900mA
PTRA082808NF-V1-R5 RF LDMOS FET 280W, 790 - 820MHZ Cree/Wolfspeed PG-HBSOF-6-2 280W 790MHz ~ 820MHz 105V 10µA HBSOF-6-2 LDMOS (Dual), Common Source 15.5dB 48V 200mA
PTFB091802FC-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed
CGHV31500F RF MOSFET HEMT 50V 440217 Cree/Wolfspeed 440217 500W 2.7GHz ~ 3.1GHz 125V 24A 440217 HEMT 13.5dB 50V 500mA GaN
CGHV14250P 250W, GAN HEMT, 50V, 0.5-1.8GHZ, Cree/Wolfspeed 440161 250W 1.2GHz ~ 1.4GHz 150V 440161 HEMT 17.8dB 50V 500mA GaN
PTFB090901EA-V2-R0 IC AMP RF LDMOS H-36265-2 Cree/Wolfspeed H-36265-2 25W 960MHz 65V H-36265-2 LDMOS 19.5dB 28V 650mA
PXAD214218FV-V1-R0 IC AMP RF LDMOS H-37275G-6 Cree/Wolfspeed H-37275G-6/2 290W 2.11GHz ~ 2.17GHz 65V 10µA H-37275G-6/2 LDMOS 13.5dB 28V 720mA
CAS100H12AM1 MOSFET 2N-CH 1200V 168A MODULE Cree/Wolfspeed Module 568W Chassis Mount Module 2 N-Channel (Half Bridge) 1200V (1.2kV) 168A Standard 20mOhm @ 20A, 20V 3.1V @ 50mA 9500pF @ 800V Z-FET™
C3M0120100J MOSFET N-CH 1000V 22A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 83W (Tc) 1000V 22A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 21.5nC @ 15V 350pF @ 600V +15V, -4V C3M™
C3M0065100K 1000V, 65 MOHM, G3 SIC MOSFET Cree/Wolfspeed TO-247-4L Through Hole TO-247-4 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113.5W (Tc) 1000V 35A (Tc) 78mOhm @ 20A, 15V 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V +19V, -8V C3M™
C3M0280090J MOSFET N-CH 900V 11A Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 50W (Tc) 900V 11A (Tc) 360mOhm @ 7.5A, 15V 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V +18V, -8V C3M™
C3M0016120K SIC MOSFET G3 1200V 16 MOHM Cree/Wolfspeed TO-247-4 Through Hole TO-247-4 SiCFET (Silicon Carbide) -40°C ~ 175°C (TJ) N-Channel 556W (Tc) 1.2kV 115A (Tc) 22.3mOhm @ 75A, 15V 15V 3.6V @ 23mA 211nC @ 15V 6085pF @ 1000V +15V, -4V C3M™
CAB425M12XM3 1.2KV, 425A SWITCHING LOSS OPTIM Cree/Wolfspeed 50mW Chassis Mount Module -40°C ~ 175°C (TJ) 2 N-Channel (Half Bridge) 1200V (1.2kV) 450A Silicon Carbide (SiC) 4.2mOhm @ 425A, 15V 3.6V @ 115mA 1135nC @ 15V 30.7nF @ 800V CAB425M12XM3
C2M0040120D MOSFET N-CH 1200V 60A TO-247 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 330W (Tc) 1200V 60A (Tc) 52mOhm @ 40A, 20V 20V 2.8V @ 10mA 115nC @ 20V 1893pF @ 1000V +25V, -10V Z-FET™
CAS120M12BM2 MOSFET 2N-CH 1200V 193A MODULE Cree/Wolfspeed Module 925W Chassis Mount Module -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 1200V (1.2kV) 193A (Tc) Silicon Carbide (SiC) 16mOhm @ 120A, 20V 2.6V @ 6mA (Typ) 378nC @ 20V 6300pF @ 1000V Z-Rec®
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