- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PTVA120501EA-V1-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | ||||||||||||||||||||||||||
GTVA262711FA-V2-R0 | GAN HEMT 48V 300W 2496-2690MHZ | Cree/Wolfspeed | H-87265J-2 | 70W | 2.62GHz ~ 2.69GHz | 125V | H-87265J-2 | HEMT | 18dB | 48V | 320mA | GaN | ||||||||||||||||
PXAC213308FV-V1-R0 | RF MOSFET TRANSISTORS RFP-LD10M | Cree/Wolfspeed | ||||||||||||||||||||||||||
GTRA262802FC-V2-R0 | 280W, GAN HEMT, 48V, 2496-2690MH | Cree/Wolfspeed | H-37248C-4 | 250W | 2.49GHz ~ 2.69GHz | 125V | H-37248C-4 | HEMT | 14dB | 48V | 200mA | GaN | ||||||||||||||||
PTRA093608PV1-V1-R2 | RF MOSFET LDMOS LG-31275PS-6 | Cree/Wolfspeed | ||||||||||||||||||||||||||
CG2H40120P | 120W, GAN HEMT, 28V, DC-4.0GHZ, | Cree/Wolfspeed | 440206 | 120W | 2.5GHz | 120V | 440206 | HEMT | 20dB | 28V | 1A | GaN | ||||||||||||||||
GTVA101K42EV-V1-R0 | GAN HEMT 50V 1400W 0.96-1.4GHZ | Cree/Wolfspeed | H-36275-4 | 1400W | 960MHz ~ 1.215GHz | 125V | H-36275-4 | HEMT | 17dB | 50V | GaN | |||||||||||||||||
PXAC210552MD-V1-R5 | RF MOSFET TRANSISTORS | Cree/Wolfspeed | ||||||||||||||||||||||||||
CGHV1J070D-GP4 | RF MOSFET HEMT 40V DIE | Cree/Wolfspeed | Die | 70W | 18GHz | 100V | Die | HEMT | 17dB | 40V | 360mA | GaN | ||||||||||||||||
GTVA262701FA-V2-R2 | 270W, GAN HEMT, 48V, 2496-2690MH | Cree/Wolfspeed | H-87265J-2 | 270W | 2.62GHz ~ 2.69GHz | 125V | H-87265J-2 | HEMT | 17dB | 48V | 320mA | GaN | ||||||||||||||||
PXAC203302FV-V1-R0 | RF MOSFET TRANSISTORS | Cree/Wolfspeed | ||||||||||||||||||||||||||
PTVA120121M-V1-R1K | RF MOSFET LDMOS 48V PG-SON-10 | Cree/Wolfspeed | PG-SON-10 | 15.62W | 500MHz ~ 1.4GHz | 105V | 1µA | 10-LDFN Exposed Pad | LDMOS | 21.64dB | 48V | 50mA | ||||||||||||||||
CPMF-1200-S160B | MOSFET N-CHANNEL 1200V 28A DIE | Cree/Wolfspeed | Die | Surface Mount | Die | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 202W (Tj) | 1200V | 28A (Tj) | 220mOhm @ 10A, 20V | 20V | 4V @ 1mA | 47.1nC @ 20V | 928pF @ 800V | +25V, -5V | Z-FET™ | ||||||||||
CGH40006P | RF MOSFET HEMT 28V 440109 | Cree/Wolfspeed | 440109 | 8W | 0Hz ~ 6GHz | 84V | 3.5A | 440109 | HEMT | 13dB | 28V | 100mA | GaN | |||||||||||||||
PTFC262808FV-V1-R250 | IC AMP RF LDMOS | Cree/Wolfspeed |
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