• Manufacturer: Cree/Wolfspeed
• Package / Case: HBSOF-4-1
• Supplier Device Package: PG-HBSOF-4-1
• Frequency: 869MHz ~ 960MHz
• Voltage - Rated: 105V
• Current - Test: 900mA
• Power - Output: 240W
• Transistor Type: LDMOS
• Gain: 22.5dB
• Voltage - Test: 48V
• Current Rating (Amps): 10µA

• Manufacturer: Cree/Wolfspeed
• Package / Case: HBSOF-6-2
• Supplier Device Package: PG-HBSOF-6-2
• Frequency: 790MHz ~ 820MHz
• Voltage - Rated: 105V
• Current - Test: 200mA
• Power - Output: 280W
• Transistor Type: LDMOS (Dual), Common Source
• Gain: 15.5dB
• Voltage - Test: 48V
• Current Rating (Amps): 10µA

• Manufacturer: Cree/Wolfspeed

• Manufacturer: Cree/Wolfspeed
• Series: GaN
• Package / Case: 440217
• Supplier Device Package: 440217
• Frequency: 2.7GHz ~ 3.1GHz
• Voltage - Rated: 125V
• Current - Test: 500mA
• Power - Output: 500W
• Transistor Type: HEMT
• Gain: 13.5dB
• Voltage - Test: 50V
• Current Rating (Amps): 24A

• Manufacturer: Cree/Wolfspeed
• Series: GaN
• Package / Case: 440161
• Supplier Device Package: 440161
• Frequency: 1.2GHz ~ 1.4GHz
• Voltage - Rated: 150V
• Current - Test: 500mA
• Power - Output: 250W
• Transistor Type: HEMT
• Gain: 17.8dB
• Voltage - Test: 50V

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-36265-2
• Supplier Device Package: H-36265-2
• Frequency: 960MHz
• Voltage - Rated: 65V
• Current - Test: 650mA
• Power - Output: 25W
• Transistor Type: LDMOS
• Gain: 19.5dB
• Voltage - Test: 28V

• Manufacturer: Cree/Wolfspeed
• Package / Case: H-37275G-6/2
• Supplier Device Package: H-37275G-6/2
• Frequency: 2.11GHz ~ 2.17GHz
• Voltage - Rated: 65V
• Current - Test: 720mA
• Power - Output: 290W
• Transistor Type: LDMOS
• Gain: 13.5dB
• Voltage - Test: 28V
• Current Rating (Amps): 10µA

• Manufacturer: Cree/Wolfspeed
• Series: Z-FET™
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 168A
• Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id: 3.1V @ 50mA
• Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V
• Power - Max: 568W

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: D2PAK-7
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 83W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +15V, -4V

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-4
• Supplier Device Package: TO-247-4L
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id: 3.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 113.5W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +19V, -8V

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: D2PAK-7
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 50W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +18V, -8V

• Manufacturer: Cree/Wolfspeed
• Series: C3M™
• Mounting Type: Through Hole
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: TO-247-4
• Supplier Device Package: TO-247-4
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1.2kV
• Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
• Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
• Vgs(th) (Max) @ Id: 3.6V @ 23mA
• Gate Charge (Qg) (Max) @ Vgs: 211nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 6085pF @ 1000V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 556W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs (Max): +15V, -4V

• Manufacturer: Cree/Wolfspeed
• Series: CAB425M12XM3
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 450A
• Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
• Vgs(th) (Max) @ Id: 3.6V @ 115mA
• Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
• Power - Max: 50mW

• Manufacturer: Cree/Wolfspeed
• Series: Z-FET™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.8V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V
• Technology: SiCFET (Silicon Carbide)
• Power Dissipation (Max): 330W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs (Max): +25V, -10V

• Manufacturer: Cree/Wolfspeed
• Series: Z-Rec®
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: Module
• Supplier Device Package: Module
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 193A (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 120A, 20V
• Vgs(th) (Max) @ Id: 2.6V @ 6mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 378nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 1000V
• Power - Max: 925W