• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
C3M0075120K MOSFET N-CH 1200V 30A TO247-4 Cree/Wolfspeed TO-247-4L Through Hole TO-247-4 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113.6W (Tc) 1200V 30A (Tc) 90mOhm @ 20A, 15V 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V +19V, -8V C3M™
CAB400M12XM3 MOSFET 2 N-CH 1200V MODULE Cree/Wolfspeed Chassis Mount Module -40°C ~ 175°C (TJ) 2 N-Channel (Dual) 1200V 395A (Tc) Silicon Carbide (SiC) 5.3mOhm @ 400A, 15V 3.6V @ 92mA 908nC @ 15V 2450pF @ 800V
PTFB182503FL-V2-R250 IC AMP RF LDMOS Cree/Wolfspeed
PXAC201202FC-V2-R250 IC AMP RF LDMOS Cree/Wolfspeed H-37248-4 16W 2.2GHz 65V H-37248-4 LDMOS 17dB 28V 240mA
PTFB183404F-V2-R0 IC AMP RF LDMOS H-37275-6 Cree/Wolfspeed H-37275-6/2 80W 1.88GHz 65V H-37275-6/2 LDMOS 17dB 30V 2.6A
CAB450M12XM3 1.2KV 450A SIC HALF BRIDGE MOD Cree/Wolfspeed Module 850W Chassis Mount Module -40°C ~ 175°C (TJ) 2 N-Channel (Half Bridge) 1200V 450A Silicon Carbide (SiC) 3.7mOhm @ 450A, 15V 3.6V @ 132mA 1330nC @ 15V 38000pF @ 800V
CGHV96050F2 RF MOSFET HEMT 40V 440210 Cree/Wolfspeed 440210 70W 7.9GHz ~ 9.6GHz 100V 6A 440210 HEMT 10dB 40V 500mA GaN
CGHV14250F RF MOSFET HEMT 50V 440162 Cree/Wolfspeed 440162 330W 1.2GHz ~ 1.4GHz 125V 42mA 440162 HEMT 18dB 50V 500mA GaN
C3M0032120K MOSFET N-CH SIC 1200V 100A Cree/Wolfspeed TO-247-4L Through Hole TO-247-4 SiCFET (Silicon Carbide) -40°C ~ 175°C (TJ) N-Channel 283W (Tc) 1200V 63A (Tc) 43mOhm @ 40A, 15V 15V 3.6V @ 11.5mA 118nC @ 15V 3357pF @ 1000V +15V, -4V C3M™
PTFB212503EL-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed H-33288-6 55W 2.17GHz 65V H-33288-6 LDMOS 18.1dB 30V 1.85A
E3M0120090D E-SERIES 900V, 120 MOHM, G3 SIC Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 97W (Tc) 900V 23A (Tc) 155mOhm @ 15A, 15V 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V +18V, -8V Automotive, AEC-Q101, E
PXAC260602FC-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed H-37248-4 5W 2.69GHz 65V H-37248-4 LDMOS 15.7dB 28V 85mA
PTFB090901FA-V2-R250 IC AMP RF LDMOS Cree/Wolfspeed
PTRA094252FC-V1-R0 RF MOSFET LDMOS DUAL H-37248-4 Cree/Wolfspeed H-37248-4 351.5W 746MHz ~ 960MHz 105V 10µA H-37248-4 LDMOS (Dual), Common Source 23dB
PTFB091507FH-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed
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