- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV14500F | RF MOSFET HEMT 50V 440117 | Cree/Wolfspeed | 440117 | 500W | 1.2GHz ~ 1.4GHz | 125V | 36A | 440117 | HEMT | 17dB | 50V | 500mA | GaN | |||||||||||||||
C3M0120090D | 900V, 120 MOHM, G3 SIC MOSFET | Cree/Wolfspeed | TO-247-3 | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 97W (Tc) | 900V | 23A (Tc) | 155mOhm @ 15A, 15V | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | C3M™ | ||||||||||
PTFC262157FH-V1-R0 | RF MOSFET TRANSISTORS | Cree/Wolfspeed | ||||||||||||||||||||||||||
C3M0030090K | ZFET 900V, 30 MOHM, G3 SIC MOSFE | Cree/Wolfspeed | TO-247-4 | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 149W (Tc) | 900V | 63A (Tc) | 39mOhm @ 35A, 15V | 15V | 3.5V @ 11mA | 87nC @ 15V | 1864pF @ 600V | +15V, -4V | C3M™ | ||||||||||
PTFB211501E-V1-R0 | IC AMP RF LDMOS H-36248-2 | Cree/Wolfspeed | H-36248-2 | 40W | 2.17GHz | 65V | H-36248-2 | LDMOS | 18dB | 30V | 1.2A | |||||||||||||||||
PTFA211801E-V5-R0 | RF MOSFET LDMOS 28V H-36260-2 | Cree/Wolfspeed | H-36260-2 | 180W | 2.11GHz ~ 2.17GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.5dB | 28V | 1.2A | ||||||||||||||||
PXAC241702FC-V1-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | H-37248-4 | 28W | 2.4GHz | 65V | H-37248-4 | LDMOS | 16.5dB | 28V | 360mA | |||||||||||||||||
PTVA120251EA-V1 | RF MOSFET LDMOS H-36265-2 | Cree/Wolfspeed | H-36265-2 | 34W | 500MHz ~ 1.4GHz | 105V | 10µA | H-36265-2 | LDMOS | 15.8dB | ||||||||||||||||||
PXAD184218FV-V1-R2 | IC AMP RF LDMOS H-37275G-6 | Cree/Wolfspeed | H-37275G-6/2 | 130W | 1.805GHz ~ 1.88GHz | 65V | 10µA | H-37275G-6/2 | LDMOS | 14dB | 28V | 720mA | ||||||||||||||||
CGHV59350F | RF MOSFET HEMT 50V 440217 | Cree/Wolfspeed | 440217 | 450W | 5.2GHz ~ 5.9GHz | 125V | 24A | 440217 | HEMT | 11.2dB | 50V | 1A | GaN | |||||||||||||||
PTFB211503FL-V2-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | H-34288-4/2 | 32W | 2.17GHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.2A | |||||||||||||||||
PTFB193404F-V1-R0 | IC AMP RF LDMOS H-37275-6 | Cree/Wolfspeed | H-37275-6/2 | 80W | 1.99GHz | 65V | H-37275-6/2 | LDMOS | 19dB | 30V | 2.6A | |||||||||||||||||
PXAC182002FC-V1-R0 | RF MOSFET TRANSISTORS | Cree/Wolfspeed | ||||||||||||||||||||||||||
C2M0080170P | ZFET SIC DMOSFET, 1700V VDS, RDS | Cree/Wolfspeed | TO-247-4 | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | N-Channel | 277W (Tc) | 1700V | 40A (Tc) | 125mOhm @ 28A, 20V | 20V | 4V @ 10mA | 120nC @ 20V | 2250pF @ 1000V | +25V, -10V | C2M™ | ||||||||||
PTFB192503FL-V2-R0 | IC AMP RF LDMOS H-34288-4 | Cree/Wolfspeed | H-34288-4/2 | 50W | 1.99GHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 19dB | 30V | 1.9A |
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