• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
CGHV40030P 30W, GAN HEMT, 50V, DC-6.0GHZ, P Cree/Wolfspeed 440196 30W 6GHz 150V 440196 HEMT 16dB 50V 150mA GaN
PTFB091802FC-V1-R0 IC AMP RF LDMOS H-37248-4 Cree/Wolfspeed H-37248-4 55W 960MHz 65V H-37248-4 LDMOS 19.5dB 28V 1.4A
PTFB192503FL-V2-R250 IC AMP RF LDMOS Cree/Wolfspeed H-34288-4/2 50W 1.99GHz 65V H-34288-4/2 LDMOS 19dB 30V 1.9A
C2M0045170D MOSFET NCH 1.7KV 72A TO247 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) N-Channel 520W (Tc) 1700V 72A (Tc) 70mOhm @ 50A, 20V 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1kV +25V, -10V C2M™
PTFC270051M-V2-R1K IC AMP RF LDMOS Cree/Wolfspeed
CG2H40035P GAN HEMT 28V 35W DC-4.0GHZ PILL Cree/Wolfspeed
C2M1000170J MOSFET N-CH 1700V 5.3A TO247 Cree/Wolfspeed D2PAK (7-Lead) Surface Mount TO-263-7 (Straight Leads) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 78W (Tc) 1700V 5.3A (Tc) 1.4Ohm @ 2A, 20V 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V +25V, -10V C2M™
CMF20120D MOSFET N-CH 1200V 42A TO-247-3 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) N-Channel 215W (Tc) 1200V 42A (Tc) 110mOhm @ 20A, 20V 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V +25V, -5V Z-FET™
C3M0065090D MOSFET N-CH 900V 36A TO247-3 Cree/Wolfspeed TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 125W (Tc) 900V 36A (Tc) 78mOhm @ 20A, 15V 15V 2.1V @ 5mA 30.4nC @ 15V 660pF @ 600V +18V, -8V C3M™
CGH40035F RF MOSFET HEMT 28V 440193 Cree/Wolfspeed 440193 45W 0Hz ~ 4GHz 84V 10.5A 440193 HEMT 14dB 28V 500mA GaN
PTFB213004F-V2-R0 IC AMP RF LDMOS H-37275-6 Cree/Wolfspeed H-37275-6/2 60W 2.17GHz 65V H-37275-6/2 LDMOS 18dB 30V 2.4A
PTFB213208FV-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed H-37275G-6/2 320W 2.11GHz ~ 2.17GHz 65V 10µA H-37275G-6/2 LDMOS 17dB 28V 2.6A
CCS050M12CM2 MOSFET 6N-CH 1200V 87A MODULE Cree/Wolfspeed Module 337W Chassis Mount Module 150°C (TJ) 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 87A (Tc) Silicon Carbide (SiC) 34mOhm @ 50A, 20V 2.3V @ 2.5mA 180nC @ 20V 2.810nF @ 800V Z-FET™ Z-Rec™
C3M0065090J MOSFET N-CH 900V 35A D2PAK-7 Cree/Wolfspeed D2PAK-7 Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 113W (Tc) 900V 35A (Tc) 78mOhm @ 20A, 15V 15V 2.1V @ 5mA 30nC @ 15V 660pF @ 600V +19V, -8V C3M™
PTAB182002FC-V1-R250 IC AMP RF LDMOS Cree/Wolfspeed
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