Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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Found: 6217

MUN2240T1G

TRANS PREBIAS NPN 50V 100MA SC59

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- Power - Max: 338mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 47kOhms
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XN0111300L

TRANS PREBIAS DUAL PNP MINI5

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: Mini5-G1
- Power - Max: 300mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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XN0111100L

TRANS PREBIAS DUAL PNP MINI5

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: Mini5-G1
- Power - Max: 300mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
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DRC5113Z0L

TRANS PREBIAS NPN 150MW SMINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2-B
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PDTA143ZQCZ

PDTA143ZQC/SOT8009/DFN1412D-3

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
- Power - Max: 360mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 180MHz
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
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RN1965FE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DTA144EU3T106

PNP -100MA -50V DIGITAL TRANSIST

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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UNR9213J0L

TRANS PREBIAS NPN 125MW SSMINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F1
- Power - Max: 125mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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FJNS4203RBU

TRANS PREBIAS PNP 300MW TO92S

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
- Power - Max: 300mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
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PUMD3-QZ

TRANS PREBIAS NPN/PNP 50V 6TSSOP

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
- Power - Max: 200mW
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz, 180MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
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NSBC123JF3T5G

TRANS PREBIAS NPN 50V SOT1123

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: SOT-1123
- Power - Max: 254mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DTC123JKAT146

TRANS PREBIAS NPN 200MW SMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DDTA144VCA-7

TRANS PREBIAS PNP 200MW SOT23-3

Diodes Incorporated
- Manufacturer: Diodes Incorporated
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DCX123JK-7-F

TRANS NPN/PNP PREBIAS 0.3W SC74R

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74R
- Power - Max: 300mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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BCR183S

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-59, SOT-23-3, TO-236-3
- Supplier Device Package: PG-SOT23-3-11
- Power - Max: 250mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
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	Значение	Кол‑во
	Comchip Technology ⇒	20
	Cypress Semiconductor Corp ⇒	1
	Diodes Incorporated ⇒	768
	Diotec Semiconductor ⇒	32
	Fairchild Semiconductor ⇒	82
	Infineon Technologies ⇒	333
	Micro Commercial Co ⇒	85
	Nexperia USA Inc. ⇒	711
	NXP Semiconductors ⇒	33
	NXP USA Inc. ⇒	250
	onsemi ⇒	970
	Panasonic Electronic Components ⇒	900
	Panjit International Inc. ⇒	1
	Philips ⇒	13
	Renesas ⇒	5
	Renesas Electronics America ⇒	3
	Renesas Electronics America Inc ⇒	6
	Rochester Electronics, LLC ⇒	335
	Rohm Semiconductor ⇒	929
	Sanyo ⇒	4
	Toshiba Semiconductor and Storage ⇒	731
	Yangzhou Yangjie Electronic Technology Co.,Ltd ⇒	5

Manufacturer (22)