Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased Renesas Electronics America
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- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
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- Manufacturer: Renesas Electronics America
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Resistor - Base (R1): 22 Ohms
- Resistor - Emitter Base (R2): 22 Ohms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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- Manufacturer: Renesas Electronics America
- Series: HD1
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SC-62
- Power - Max: 2W
- Transistor Type: 1 NPN Pre-Biased, 1 NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 1kOhms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Renesas Electronics America
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Resistor - Base (R1): 22 Ohms
- Resistor - Emitter Base (R2): 22 Ohms
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100