Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased Panjit International Inc.

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 1
  • 2SC164S_R1_00001
    APPLICATION SPECIFIC MULTICHIP C
    Panjit International Inc.
    • Manufacturer: Panjit International Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOT-23-6
    • Supplier Device Package: SOT-23-6
    • Power - Max: 1W
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 40V, 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 150mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 300mV @ 1mA, 10mA
    • Current - Collector Cutoff (Max): 50nA, 500nA (ICBO)
    • Frequency - Transition: 300MHz, 250MHz
    • Resistor - Base (R1): 10kOhms
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