Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased NXP USA Inc.

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
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List Table
Found: 250
  • PBRN113ES,126
    TRANS PREBIAS NPN 0.7W TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 700mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 1kOhms
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  • PBLS1502V,115
    TRANS NPN PREBIAS/PNP SOT666
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: SOT-666
    • Power - Max: 300mW
    • Transistor Type: 1 NPN Pre-Biased, 1 PNP
    • Current - Collector (Ic) (Max): 100mA, 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V, 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
    • Current - Collector Cutoff (Max): 1µA, 100nA
    • Frequency - Transition: 280MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PEMB1,115
    NOW NEXPERIA PEMB1 - SMALL SIGNA
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: SOT-666
    • Power - Max: 300mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • PDTC143ES,126
    TRANS PREBIAS NPN 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PDTA144VS,126
    TRANS PREBIAS PNP 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PUMF12,115
    NOW NEXPERIA PUMF12 - SC-88
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: 6-TSSOP
    • Power - Max: 300mW
    • Transistor Type: 1 NPN Pre-Biased, 1 PNP
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 100MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA115EMB,315
    NOW NEXPERIA PDTA115EMB - SMALL
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006B-3
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 20mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 100kOhms
    • Resistor - Emitter Base (R2): 100kOhms
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  • PDTC123JS,126
    TRANS PREBIAS NPN 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTC124EE,115
    TRANS PREBIAS NPN 150MW SC75
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SC-75
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • PUMB11,135
    NOW NEXPERIA PUMB11 - SMALL SIGN
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: SOT-363
    • Power - Max: 300mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTA144WT,215
    NOW NEXPERIA PDTA144WT - SMALL S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 22kOhms
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  • PDTC143EE,115
    TRANS PREBIAS NPN 150MW SC75
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SC-75
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
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  • PDTB123YS,126
    TRANS PREBIAS PNP 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTA144EMB,315
    NOW NEXPERIA PDTA144EMB - SMALL
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: DFN1006B-3
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Frequency - Transition: 180MHz
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA143ZEF,115
    TRANS PREBIAS PNP 250MW SC89
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: SC-89, SOT-490
    • Supplier Device Package: SC-89
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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