Transistors - Bipolar (BJT) - Arrays, Pre-Biased NXP USA Inc. | Transistors

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Found: 250

PDTC114TEF,115

TRANS PREBIAS NPN 150MW SC89

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SC-89
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 10kOhms
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PDTC143XE,115

TRANS PREBIAS NPN 150MW SC75

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PDTA113ZK,115

TRANS PREBIAS PNP 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PBRN113ZS,126

TRANS PREBIAS NPN 0.7W TO92-3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 700mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PBRN113ZK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PDTC123EK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
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PDTA143ZS,126

TRANS PREBIAS PNP 500MW TO92-3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 500mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PDTC124ET,235

NOW NEXPERIA PDTC124ET - SMALL S

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
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PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
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PDTA124XE,115

TRANS PREBIAS PNP 150MW SC75

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PIMH9,115

NOW NEXPERIA PIMH9 - SMALL SIGNA

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
- Power - Max: 600mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PDTC143TK,115

TRANS PREBIAS NPN 250MW SMT3

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 4.7kOhms
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PDTA143TE,115

TRANS PREBIAS PNP 150MW SC75

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Resistor - Base (R1): 4.7kOhms
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PUML1,115

TRANS NPN PREBIAS/NPN 6TSSOP

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
- Power - Max: 300mW
- Transistor Type: 1 NPN Pre-Biased, 1 NPN
- Current - Collector (Ic) (Max): 100mA, 200mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PDTA144EU,115

NOW NEXPERIA PDTA144EU - SMALL S

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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