Semiconductors, Transistors, Transistors - Bipolar (BJT) - Arrays, Pre-Biased Toshiba Semiconductor and Storage

    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Resistor - Emitter Base (R2)
    • Package / Case
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 731
  • RN2105CT(TPL3)
    TRANS PREBIAS PNP 20V 0.05A CST3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: CST3
    • Power - Max: 50mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 50mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2606(TE85L,F)
    TRANS 2PNP PREBIAS 0.3W SM6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-74, SOT-457
    • Supplier Device Package: SM6
    • Power - Max: 300mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2905FE,LXHF(CT
    AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: ES6
    • Power - Max: 100mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2706JE(TE85L,F)
    TRANS 2PNP PREBIAS 0.1W ESV
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SOT-553
    • Supplier Device Package: ESV
    • Power - Max: 100mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2967(TE85L,F)
    TRANS 2PNP PREBIAS 0.2W US6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: US6
    • Power - Max: 200mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN1131MFV(TL3,T)
    TRANS PREBIAS NPN 50V 0.1A VESM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: VESM
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Resistor - Base (R1): 100kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2103MFV,L3F(CT
    TRANS PREBIAS PNP 50V 0.1A VESM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: VESM
    • Power - Max: 150mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 22kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN1114MFV,L3F
    TRANS PREBIAS NPN 50V 0.1A VESM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: VESM
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2108CT(TPL3)
    TRANS PREBIAS PNP 20V 0.05A CST3
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-101, SOT-883
    • Supplier Device Package: CST3
    • Power - Max: 50mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 50mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2106(T5L,F,T)
    TRANS PREBIAS PNP 50V 0.1A SSM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SC-75, SOT-416
    • Supplier Device Package: SSM
    • Power - Max: 100mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN1965FE(TE85L,F)
    TRANS 2PNP PREBIAS 0.1W ES6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: ES6
    • Power - Max: 100mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2901(T5L,F,T)
    TRANS 2PNP PREBIAS 0.2W US6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: US6
    • Power - Max: 200mW
    • Transistor Type: 2 PNP - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 4.7kOhms
    • Resistor - Emitter Base (R2): 4.7kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN2426(TE85L,F)
    TRANS PREBIAS PNP 50V 0.8A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Frequency - Transition: 200MHz
    • Resistor - Base (R1): 1kOhms
    • Resistor - Emitter Base (R2): 10kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN1970(TE85L,F)
    TRANS 2NPN PREBIAS 0.2W US6
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Supplier Device Package: US6
    • Power - Max: 200mW
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 250MHz
    • Resistor - Base (R1): 4.7kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • RN1104MFV,L3F(CT
    TRANS PREBIAS NPN 50V 0.1A VESM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: SOT-723
    • Supplier Device Package: VESM
    • Power - Max: 150mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100