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List Table
Found: 23
Partnumber Description Manufacturer
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Transistor Type
Supplier Device Package
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Resistor - Emitter Base (R2)
Package / Case
RN2706JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
RN1709JE(TE85L,F) NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 47kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 250MHz 22kOhms SOT-553
RN2703JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 200MHz 22kOhms SOT-553
RN1708JE(TE85L,F) NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms SOT-553
RN2712JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN2710JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN2704JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
RN1702JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 50 @ 10mA, 5V 250MHz 10kOhms SOT-553
RN2713JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN1705JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 2.2kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-553
RN2707JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ESV 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
RN1706JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-553
RN2711JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN1703JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 250MHz 22kOhms SOT-553
RN2708JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
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