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Списком Таблицей
Найдено: 23
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
RN2706JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
RN1709JE(TE85L,F) NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 47kOhms 300mV @ 250µA, 5mA 500nA 70 @ 10mA, 5V 250MHz 22kOhms SOT-553
RN2703JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 200MHz 22kOhms SOT-553
RN1708JE(TE85L,F) NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 500nA 80 @ 10mA, 5V 250MHz 47kOhms SOT-553
RN2712JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN2710JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN2704JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
RN1702JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 50 @ 10mA, 5V 250MHz 10kOhms SOT-553
RN2713JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 47kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN1705JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 2.2kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-553
RN2707JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ESV 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
RN1706JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 4.7kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 250MHz 47kOhms SOT-553
RN2711JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) (Emitter Coupled) ESV 10kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 120 @ 1mA, 5V 200MHz SOT-553
RN1703JE(TE85L,F) TRANS 2NPN PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 NPN - Pre-Biased (Dual) (Emitter Coupled) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 70 @ 10mA, 5V 250MHz 22kOhms SOT-553
RN2708JE(TE85L,F) TRANS 2PNP PREBIAS 0.1W ESV Toshiba Semiconductor and Storage 100mA 50V 100mW Surface Mount 2 PNP - Pre-Biased (Dual) ESV 22kOhms 300mV @ 250µA, 5mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz 47kOhms SOT-553
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