Transistors - Bipolar (BJT) - Arrays, Pre-Biased package ESV | Transistors

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List Table

Found: 23

RN2706JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
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RN1709JE(TE85L,F)

NPN X 2 BRT Q1BSR=47KOHM Q1BER=2

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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RN2703JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
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RN1708JE(TE85L,F)

NPN X 2 BRT Q1BSR=22KOHM Q1BER=4

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
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RN2712JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 22kOhms
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RN2710JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 4.7kOhms
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RN2704JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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RN1702JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
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RN2713JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 47kOhms
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RN1705JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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RN2707JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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RN1706JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
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RN2711JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 10kOhms
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RN1703JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
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RN2708JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
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Output by:

	Значение	Кол‑во
	5-SSOP	2
	6-TSOP	37
	6-TSSOP	151
	8-SO	3
	CST3	52
	DFN1006-3	9
	DFN1006B-3	58
	DFN1010B-6	13
	DFN1010D-3	15
	DFN1110D-3	36
	DFN1412-6	12
	DFN1412D-3	36
	EMT3	77
	EMT3F (SOT-416FL)	83
	EMT5	15
	EMT6	69
	ES6	114
	ESV	23
	Mini3-G1	47
	Mini3-G3-B	60
	Mini5-G1	23
	Mini5-G3-B	21
	MINI6-G1	31
	Mini6-G4-B	30
	MiniP3-F1	1
	ML3-N2	6
	ML4-N1	6
	MPT3	2
	NS-A1	4
	NS-B1	28
	PG-SC74-6	4
	PG-SC-75	32
	PG-SOT23	69
	PG-SOT23-3-11	9
	PG-SOT323	40
	PG-SOT323-3	35
	PG-SOT363-6	6
	PG-SOT363-6-1	3
	PG-SOT363-PO	72
	PG-TSFP-3	32

Supplier Device Package (40)