- Current - Collector (Ic) (Max)
- Manufacturer
- Voltage - Collector Emitter Breakdown (Max)
- Transistor Type
- Supplier Device Package
-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
| Partnumber | Description | Manufacturer
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Supplier Device Package
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Package / Case
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RN1441ATE85LF | TRANS PREBIAS NPN 20V 0.3A SMINI | Toshiba Semiconductor and Storage | 300mA | 20V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 5.6 kOhms | 100mV @ 3mA, 30mA | 100nA (ICBO) | 200 @ 4mA, 2V | 30MHz | TO-236-3, SC-59, SOT-23-3 |
| RN1444ATE85LF | TRANS PREBIAS NPN 20V 0.3A SMINI | Toshiba Semiconductor and Storage | 300mA | 20V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 2.2kOhms | 100mV @ 3mA, 30mA | 100nA (ICBO) | 200 @ 4mA, 2V | 30MHz | TO-236-3, SC-59, SOT-23-3 |
| RN1442ATE85LF | TRANS PREBIAS NPN 20V 0.3A SMINI | Toshiba Semiconductor and Storage | 300mA | 20V | 200mW | Surface Mount | NPN - Pre-Biased | S-Mini | 10kOhms | 100mV @ 3mA, 30mA | 100nA (ICBO) | 200 @ 4mA, 2V | 30MHz | TO-236-3, SC-59, SOT-23-3 |
- 10
- 15
- 50
- 100