Found: 3
  • TRANS PREBIAS NPN 20V 0.3A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 300mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 30MHz
    • Resistor - Base (R1): 5.6 kOhms
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  • TRANS PREBIAS NPN 20V 0.3A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 300mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 30MHz
    • Resistor - Base (R1): 2.2kOhms
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  • TRANS PREBIAS NPN 20V 0.3A SMINI
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: S-Mini
    • Power - Max: 200mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 300mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 30MHz
    • Resistor - Base (R1): 10kOhms
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    • Offers in stock: