Semiconductors, Diodes GeneSiC Semiconductor Three Tower

Diodes - RF 0
Diodes - Rectifiers - Arrays 456
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 456

MBRT40035RL

DIODE SCHOTTKY 35V 200A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 200A
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MBRT60035

DIODE MODULE 35V 300A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 300A
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MBRTA80060

DIODE SCHOTTKY 60V 400A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 400A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 400A
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MURT10060R

DIODE ARRAY GP REV POLAR 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 50A
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MBRT20035

DIODE MODULE 35V 100A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 100A
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MURTA60060

DIODE MODULE 600V 300A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 280ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 300A
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MBRT500150R

DIODE SCHOTTKY 150V 250A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 250A
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MURT10020

DIODE ARRAY GP 200V 50A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 50A
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MURT10040R

DIODE ARRAY GP REV POLAR3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 50A
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MSRTA40060A

DIODE MODULE 600V 400A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 400A (DC)
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MBRTA600150

DIODE SCHOTTKY 150V 300A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 4mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 300A
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MURTA20040

DIODE GEN PURP 400V 100A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 100A
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MBRT300200

DIODE SCHOTTKY 200V 150A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 150A
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MSRTA50060(A)

DIODE MODULE 600V 500A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 500A (DC)
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MBRT60020L

DIODE SCHOTTKY 20V 300A 3 TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 300A
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